Himax Imaging, Inc.

Other

Yang Wu

Feixia Yu

Inna Patrick

Yu Hin Desmond Cheung

Amit Mittra

Kihong Kim

Desmond Cheung

Chung-Wei Chang

Chi-Shao Lin

Ki-Hong Kim

Fei-Xia Yu

An image sensor structure has a visible light detection region and an infrared light detection region neighboring the visible light detection region. The image sensor structure includes a semiconductor substrate, photo sensing members, an infrared absorption enhancing member, a color filter and an infrared pass filter. The semiconductor substrate has a front side and a back side opposite to each other. The first photo sensing member is disposed in the front side of the semiconductor substrate. The infrared absorption enhancing member is in the back side of the semiconductor substrate and only in the infrared light detection region. The color filter is over the back side of the semiconductor substrate and in the visible light detection region. The infrared pass filter is over the infrared absorption enhancing member.

Image sensor structure and method of forming the same

A pixel structure of an image sensor is provided and includes following units. A crystalline layer of a first doping type is formed on a substrate. A photodiode region is formed in the crystalline layer. A gate of a source follower transistor is formed on a top surface of the crystalline layer. A reset gate is formed on the top surface of the crystalline layer. A doped region of a second doping type is formed in the crystalline layer and formed between the reset gate and the gate of the source follower. The first doping type is different from the second doping type, and the photodiode region is connected to the doped region under the top surface of the crystalline layer as an anti-blooming path.

Pixel structure and electric device

The invention is directed to a method of operating an image sensor. A first integration is performed on a first photodiode of a pixel circuit to obtain at least one first image signal. A second integration is performed on a second photodiode of the pixel circuit to obtain a second image signal, the first photodiode having a photodiode area larger than the second photodiode. A third integration is performed by collecting blooming charge overflowing from the first photodiode to obtain an overflow image signal. The first integration has longest integration time and the third integration has shortest integration time among the first integration, the second integration and the third integration.

Image sensor and a method of operating the same

A photodiode (PD) of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a top PD of a second type disposed in a first-type layer; and a bottom PD of the second type disposed in the first-type layer and below the top PD, the bottom PD including at least one sub-photodiode (sub-PD) of the second type connected to the top PD and at least one sub-well of the first type surrounded by the at least one sub-PD.

CMOS image sensor, a photodiode thereof and a method of forming the same

A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.

CMOS image sensor and a method of forming the same

A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region.

Semiconductor structure, method for forming the same and method for suppressing hot cluster

A process of forming a semiconductor device includes second-type blanket implanting a first-type semiconductor substrate to form a second-type implant layer therein; second-type implanting the semiconductor substrate through a first mask to form second-type wells in a second region of the semiconductor substrate; and first-type implanting the semiconductor substrate through a second mask to form isolations in a first region of the semiconductor substrate and to compensate complementary sub-regions of the second region.

Process of forming a semiconductor device

A process of forming a back side illumination (BSI) image sensor is disclosed. An n-type implant is formed in a semiconductor substrate, and a p-type implant region, surrounding n-type in each pixel, is formed in the n-type implant such that in cross sectional view an n-type implant region is sandwiched between the two p-type implant regions. A transfer gate is formed on the semiconductor substrate such that the transfer gate entirely covers the n-type implant region and at least partially covers each of the p-type implant regions. A floating diffusion is formed in one of the p-type implant regions.

Process of forming a back side illumination image sensor

The present invention provides an image sensor and a fabricating method of the image sensor. The image sensor comprises: a first type epitaxial layer, a photodiode region, a first type well region, a gate region of a source follower transistor, and a first type implant isolation region. The first type well region is formed within the first type epitaxial layer with a first horizontal distance to the photodiode region and a vertical distance to a surface of the first type epitaxial layer. The gate region of a source follower transistor is formed on the surface of the first type epitaxial layer and above the first type well region, and has a second horizontal distance to the photodiode region. There is a distance between the first type implant isolation region and the first type well region as an anti-blooming path.

Image sensor and fabricating method of image sensor

A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.

Hole-based ultra-deep photodiode in a CMOS image sensor and a process thereof

A system and method of generating a color correction matrix (CCM) for an image sensor are disclosed. Quantum efficiency (QE) spectra of pixels of the image sensor illuminated by a physical light source are measured. Subsequently, color values of the image sensor and color values in a predetermined color space are determined according to the QE spectra and predetermined reference data essential for deriving the color values. Finally, the CCM for the image sensor is generated by applying a fitting algorithm on the color values of the image sensor and the color values in the predetermined color space.

System and method of generating color correction matrix for an image sensor

A process and structure of a back side illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed.

Growing community of inventors

Tainan, Taiwan

Yang Wu