Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Beijing Funate Innovation Technology Co., Ltd.

Centro De Investigação Em Energia Ren-state Grid S

Funate Innovation Technology Co. Ltd.

Yang Wei

Shou-Shan Fan

Kai-Li Jiang

Liang Liu

Peng Liu

Guang Wang

Li Qian

Jin Zhang

Hao-Ming Wei

Lei-Mei Sheng

Jie Tang

Lin Xiao

Xiao-Yang Lin

Pi-Jin Chen

Chen Feng

Qun-Qing Li

Kai Liu

He Ma

Zhuo Chen

Jiang-Tao Wang

Zhao-Fu Hu

Yang Wu

Xiang Jin

Dong-Qi Li

Jia-Ping Wang

Cai-Lin Guo

Yue-Gang Zhang

Gao-Tian Lu

Feng Drake Zhu

Hai-Yan Hao

Hua Yuan

You-Hua Lei

Ke Zhang

Wei Zhao

Bing-Chu Du

Yu-Jun He

Xiao-Bo Zhang

Tian-Yi Li

Chang-Hong Liu

Wei Wei

Hua Yin Huang

Yuan-Chao Yang

Ding Wang

Jing Qi

Bing-Yu Xia

Bruno Miguel Magalhães Soares

André Quaresma Dos Santos

Guang-qi Zhang

The present application provides a logic gate device. The logic gate device includes a gate electrode, a gate insulating layer, a bottom electrode, a two-dimensional semiconductor layer, a first top electrode and a second electrode. The gate insulating layer is located on the gate electrode. The bottom electrode is located on the gate insulating layer. The two-dimensional semiconductor layer is located on the bottom electrode and simultaneously covers the gate insulating layer. The first top electrode and the second electrode are located on the two-dimensional semiconductor layer. The bottom electrode, the two-dimensional semiconductor layer and the gate insulating layer form an air gap, and the air gap is distributed at both sides of the bottom electrode. The gate electrode is configured to connect a gate voltage, and the first top electrode and the second top electrode are configured to connect a signal input terminal.

Logic gate device

A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.

Tunneling transistor

A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.

Carbon nanotube composite structure

A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Thin film transistor and filter using thin film transistor

A nanofiber actuator comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Nanofiber actuator and method for making the same

A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Method of n-type doping carbon nanotube

A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Method of p-type doping carbon nanotube

A laser remote control switching system comprises a laser source and a control circuit. The control circuit comprises a power, an electronic device, a first electrode, a second electrode, and a photosensitive element electrically connected in sequence to form a loop. Each of the two nanofiber actuators comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Laser remote control switching system

The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

Solar battery

A supercapacitor is provided. The supercapacitor includes an elastic fiber, an internal electrode, a first electrolyte layer, and an external electrode. The internal electrode, the first electrolyte layer, and the external electrode are sequentially wrapped on an outer surface of the elastic fiber. The internal electrode includes a first carbon nanotube film and a NiO@MnOcomposite structure, and the external electrode includes a second carbon nanotube film and a FeOlayer.

Supercapacitor

A cavity blackbody radiation source is provided. The cavity blackbody radiation source comprises a blackbody radiation cavity and a carbon nanotube composite material. The blackbody radiation cavity comprises an inner surface. The carbon nanotube composite material is located on the inner surface. The carbon nanotube composite material comprises a black lacquer and a plurality of carbon nanotubes, and the plurality of carbon nanotubes is dispersed in the black lacquer.

Cavity blackbody radiation source and method of making the same

A cavity blackbody radiation source is provide. The cavity blackbody radiation source comprises a blackbody radiation cavity and a carbon nanotube composite material. The blackbody radiation cavity comprises an inner surface. The carbon nanotube composite material is located on the inner surface. The carbon nanotube composite material comprises a black lacquer and a plurality of carbon nanotubes, and the plurality of carbon nanotubes is in an upright state in the black lacquer.

Cavity blackbody radiation source

The present disclosure relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, a first carbon nanotube, and a second carbon nanotube. The semiconductor layer comprises an N-type semiconductor layer and a P-type semiconductor layer stacked with each other. The first carbon nanotube is on a first surface of the semiconductor layer. The second carbon nanotube is on a second surface of the semiconductor layer. A first extending direction of the first carbon nanotube intersects with a second extending direction of the second carbon nanotube. At an intersection of the first carbon nanotube and the second carbon nanotube, and in a direction perpendicular to the semiconductor layer, a multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor layer, and the second carbon nanotube.

Semiconductor structure and semiconductor device using the same

The disclosure relates to a method for making charged nanoparticles, the method includes: providing a solution with a first solute; atomizing the solution into micro-scaled droplets; providing a charged electrode with at least one through-hole, a negative or positive electric potential is applied to the electrode; allowing the micro-scaled droplets to pass through the at least one through-hole.

Method for making charged nanoparticles

The present invention relates to a blackbody radiation source. The blackbody radiation source comprises a blackbody radiation cavity and a carbon nanotube structure. The blackbody radiation cavity comprises an inner surface. The carbon nanotube structure is located on the inner surface. The carbon nanotube structure comprises a first carbon nanotube layer in contact with the inner surface, a second carbon nanotube layer located on a surface of the first carbon nanotube layer and a third carbon nanotube layer located between the first carbon nanotube layer and the second carbon nanotube layer. The first carbon nanotube layer and the second carbon nanotube layer are fixed together by the third carbon nanotube layer.

Blackbody radiation source

Growing community of inventors

Beijing, China

Yang Wei