Xiamen Changelight Co., Ltd.

Yang Wang

Zhiwei Lin

Kaixuan Chen

Wei Jiang

Xiangjing Zhuo

Tianzu Fang

Jichu Tong

Junxian Li

Yingce Liu

Zhendong Wei

Xingen Wu

Qilong Wu

Yong Zhang

Hongyi Zhou

Xinmao Huang

Yongtong Li

Qimeng Lyu

Gengcheng Li

Hexun Cai

Bin Song

Lihe Cai

A light-emitting diode (LED) chip () comprises a substrate (), an epitaxial structure (), a transparent conductive layer (), a passivation protective layer (), and at least one electrode (). The epitaxial structure () is disposed on the substrate (). The transparent conductive layer () is disposed on the epitaxial structure (). The transparent conductive layer () defines one or more first through holes () that extend through the transparent conductive layer (). The passivation protective layer () is disposed on the transparent conductive layer (). The passivation protective layer () defines one or more second through holes () that extend through the passivation protective layer (). The electrode () is disposed on the passivation protective layer (). The electrode () electrically connects the transparent conductive layer () through the one or more second through holes ().

Light-emitting diode chip and method of manufacturing the same

A semiconductor wafer includes a substrate (), a buffer layer () deposited on the substrate (), and an epitaxial layer () above the buffer layer (). The buffer layer () includes a plurality of semiconductor material layers () and a plurality of oxygen-doped material layers (). The semiconductor material layers () and the oxygen-doped material layers () are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers () gradually decrease along a direction from the substrate () to the epitaxial layer ().

Light-emitting diodes with buffer layers

Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.

Buffer layers having composite structures

Growing community of inventors

Fujian, China

Yang Wang