Samsung Electronics Co., Ltd.

Yang-Sun Kim

Chang-Oh Jeong

Mun-Pyo Hong

Myung-Koo Hur

Chi-Woo Kim

Young-Jae Tak

Chun-Gi You

Jang-Soo Kim

Do-Hyun Kim

Jin-Seock Kim

Seog-Young Lim

Dong-Uk Choi

Dong-Jin Park

Kwang-Hae Choi

Chun-Duek Lee

Shang-Oa Park

June-Ing Kil

Chua-Gi You

Jueng-Gil Lee

Koog-Lok Lee

Byung-Gu Kim

Disclosed is a communication system for selecting a PLMN (Public Land Mobile Network). In the communication system, an MS (Mobile Station) transmits an MIN (Mobile Identification Number) message, an ESN (Electronic Serial Number) message and a location update request signal containing location information such that the MS's location can be registered, and searches for the PLMN on the basis of an HPLMN search period value corresponding to the location update request signal. An MSC (Mobile Switching Center) performs an authentication procedure for the MS transmitting the location update request signal, and extracts the location information from the location update request signal. A VLR (Visitor Location Register) stores subscriber data of the MS provided from outside the MS and registers a location of the MS. An HLR (Home Location Register) updates the location information of the MS extracted from the MSC, variably sets a search period value at a time of searching for an HPLMN or higher-priority PLMN on the basis of the location information of the MS, and transmits the set search period value to the MS.

Communication method and system for selecting public land mobile network

The Mo or MoW composition layer has a low resistivity of less than 15 &#x3bc;&#x3a9;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF+Ocan prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF+HCl (+He) or SF+Cl(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF, CHF, CHClF, CHF, and CF, yields good TFT characteristics, and Hplasma treatment can further improve the TFT characteristics.

Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl (&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with An Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl (&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl(&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF &plus;HCl(&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF , CHF , CHClF , CH F and C F yield the good characteristics of TFT, and H plasma treatment can cause the characteristics of the TFT to be improved.

Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof

A photoresist stripping composition suitable for both of the single wafer treatment method using an air knife process and a dipping photoresist stripping method. The composition comprises 5-15 weight % of alkanolamine, 35-55 weight % of sulfoxide or sulfone compound and 35-55 weight % of glycolether, and preferably further includes surfactant, and also 1-10 weight % of tetra methyl ammonium hydroxide or 3-15 weight % of benzenediol and 1-15 weight % of alkylsulfonic acid.

Photoresist stripping composition

Since Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single Mo or MoW layer can be used as a wiring by itself of large scale and high resolution liquid crystal. The Mo or MoW layer has the low resistivity of less than 15 .mu..OMEGA.cm and is etched to have a smooth taper angle using an Al etchant with Al or Al alloy. Therefore, it is possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.

Method for manufacturing liquid crystal display

A photoresist stripping composition is provided. The composition includes 10-30 weight % of alkanolamine, 10-35 weight % of dimethylsulfoxide, 30-50 weight % of N-methylpyrrolidone and 10-30 weight % of glycolether. The composition shows good stripping force and strips photoresist by a single-wafer treatment method using the air-knife process or by a dipping method.

In connecting a first digital key telephone to a second digital key telephone in a digital key telephone system, an additional connection module provides data transmission for a call between the first digital key telephone and the second digital key telephone. Synchronizing signal terminals and a B clock terminal of a transmitter of the connection module are connected to a transmitter of the first digital key telephone. Data transmission and receiving terminals, a D clock terminal and an input/output control port of a microprocessor of the first digital key telephone are also connected to the transmitter of the connection module. A transformer is connected to the second digital key telephone through a transmission line. The transformer is connected to transmission input and output terminals of the transmitter of the connection module through capacitors and diodes.

Digital key telephone connecting apparatus and method in a digital key

A rotary gas compressor comprises an eccentric roller rotating within a cylinder to form, together with a wall of the cylinder, a suction chamber and a compression chamber. The suction and compression chambers are separated from one another by a vane which slides within a slide hole such that an edge of the vane continuously bears against the roller and is caused to slide during rotation of the roller. Gas is sucked into the suction chamber, compressed in the compression chamber, and then discharged through a discharge port. The discharge port does not communicate directly with the compression chamber, but rather communicates with the slide hole. The vane has a gas flow recess formed therein and positioned to intermittently connect the compression chamber with the discharge port to permit gas to be discharged.

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Kyungki-do, South Korea

Yang-Sun Kim