Xilinx, Inc.

Yang Song

Steven P Young

Nui Chong

A memory cell includes a first inverter and a second inverter, wherein the first inverter and second inverter are cross-coupled using a storage node and an inverse storage node; a data node and an inverse data node, wherein the data node and inverse data node are next to a first side of the memory cell; and an address line controlling access to the storage node and the inverse storage node by the data and inverse data nodes; wherein the memory cell comprises a two gate pitch memory cell.

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Milpitas, CA, United States of America

Yang Song