Skhynix Inc.

Yang Seok Lim

Young Ock Hong

Byung Woo Kang

Hwal Pyo Kim

Jin Taek Park

Sae Jun Kwon

A method of manufacturing a semiconductor device includes forming a stacked structure including trenches having different depths, forming an insulating layer on the stacked structure to fill the trenches, and forming a plurality of protrusions located corresponding to locations of the trenches by patterning the insulating layer. The method also includes forming insulating patterns filling the trenches, respectively, by planarizing the patterned insulating layer including the plurality of protrusions.

Growing community of inventors

Icheon-si, South Korea

Yang Seok Lim