Boe Technology Group Co., Ltd.

Chinese Academy of Medical Sciences

Other

Shijiazhuang Yiling Pharmaceutical Co., Ltd.

Chinese Academy of Sciences

Beijing Boe Technology Development Co., Ltd.

Beijing Zitiao Network Technology Co., Ltd.

Lemon Inc.

China University of Mining and Technology, Beijing

Cspc Zhongqi Pharmaceutical Technology (Shijiazhuang) Co., Ltd.

Shandong Luye Pharmaceutical Co., Ltd.

Shaanxi Coal Caojiatan Mining Co., Ltd.

Shangong Luye Pharmaceutical Co., Ltd.

Beijing Bytedance Network Technology Co., Ltd.

Li, Youxin

Yang Lv

Feng Guan

Jianhua Du

Zhaohui Qiang

Chao Li

Zhi Hu Wang

Guanhua Du

Dan Zhang

Lu Wang

Youxin Li

Wanhui Liu

Yupeng Gao

Mina Yang

Jing Wang

Li Ni Zhang

Qiang Wu

Guangcai Yuan

Rui Huang

Ke Fei Wang

Cheng Fang Wang

Rui Wang

Ruifeng Ma

Yanhua Li

Yichi Zhang

Wei Shi

Ke Wang

Lin Chen

Yifan Zeng

Song Wu

Xiaoguang Chen

Woobong Lee

Kai Pang

Jingcong Zhang

Juntao Sun

Ping Xie

Chao Luo

Aoshuang Mei

Nite Luo

Gao Liu

Xiuqi Bao

Qingguo Meng

Fengmei Zhou

Xuemei Zhang

Shiying Yang

Ju Li

Gengtao Liu

Mei Gao

Nathanael Schager

Yuanfeng Tong

Haiying Cheng

Zhe Huang

Zhaolai Hua

Xuetao Pei

Zeyong Cai

Xiaocheng Tang

Xiaoyu Liu

Qinzi Tan

James Gualtieri

Wen Yue

Ying Chang

Zhihong Yang

Zhenzhong Pang

Xin Du

Julia Meng

Haoming Tan

Jiancong Xu

Shuangshuang Shi

Xiangliang Ren

Xue Nan

A thin film transistor includes a substrate and an active layer having a channel region. The active layer includes a first active pattern and at least one second active pattern. The first active pattern includes a bottom surface, a top surface and at least one side surface. The at least one side surface connects the bottom and top surfaces, and is in contact with the at least one second active pattern. A length direction of each side surface is approximately perpendicular to a length direction of the channel region. A material of at least the top surface of the first active pattern includes a first polysilicon material, and a material of the second active pattern includes a second polysilicon material; and in the length direction of the channel region, an average grain size of the first polysilicon material is greater than an average grain size of the second polysilicon material.

Thin film transistor and manufacturing method therefor, and display apparatus

Provided are a video processing method and apparatus, an electronic device, a storage medium and a program product. The method includes steps described below. A to-be-processed video is acquired, and a first face key point of a first target object in the to-be-processed video is recognized, where the first face key point corresponds to a mask key point in a three-dimensional human face mask effect; and the three-dimensional human face mask effect is added to video frames of the to-be-processed video to obtain a target video, where the mask key point in the three-dimensional human face mask effect moves with the corresponding first face key point.

Video processing method, electronic device, and storage medium

A post-processing special effect production system includes a visual operation panel and a resource file subsystem. The visual operation panel is configured to, in response to an operation instruction triggered by a user, perform a construction operation of a post-processing special effect component. The construction operation includes a node selection, an inter-node connection and a node parameter configuration that are performed for a related target node in the post-processing special effect component. The resource file subsystem is configured to provide the visual operation panel with a node-related file required by a construction of the post-processing special effect component, and receive and store a component resource file submitted by the visual operation panel relative to the post-processing special effect component.

Post-processing special effect production system and method, and ar special effect rendering method and apparatus

A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.

Thin film transistor, display apparatus, and method of fabricating thin film transistor

A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

Thin film transistor and method for manufacturing the same, array substrate, and display device

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

Photodiode, method for preparing the same, and electronic device

A sealing method for a drilled hole in three zones of overburden comprises: blocking the fissure zone and the caving zone with at least one filling bag; and transporting prepared cement slurry to the drilled hole through a hollow drill pipe, so as to block the curved subsidence zone. The three zones of overburden comprise a fissure zone, a caving zone and a curved subsidence zone.

Filling bag and sealing method for drilled hole for detection in three zones of overburden

A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

Photosensor, display apparatus, and method of fabricating photosensor

The present invention discloses a type-G crystal form of fenolamine, a preparation method thereof, and a composition and use thereof. In particular, disclosed is a type-G crystal form of the fenolamine compound (chemical name: trans-2-(2,5-dimethoxyphenyl)-3-(4-hydroxy-3-methoxyphenyl)-N-(4-hydroxyphenylethyl)acrylamide, a preparation method thereof, and a composition and use thereof. Specifically, the present invention discloses the presence of a solid of a type-G fenolamine crystal form in solid state; a method for preparing the solid of type-G crystal form; and use of the solid of the type-G fenolamine crystal form as a pharmaceutical active ingredient in the manufacture of a medicament for prevention and treatment of Parkinson's disease (PD), improvement of learning and memory disorder, and treatment of memory loss and Alzheimer's disease (AD). 

Type-G crystal form of fenolamine, preparation method, composition and use thereof

The present invention discloses a type-B crystal form of fenolamine, a preparation method thereof, and a composition and use thereof, more particularly a type-B crystal form of the fenolamine compound (chemical name: trans-2-(2,5-dimethoxyphenyl)-3-(4-hydroxy-3-methoxyphenyl)-N-(4-hydroxyphenylethyl)acrylamide, a preparation method thereof, and a composition and use thereof. Specifically, the present invention discloses the presence of a solid of a type-B fenolamine crystal form in solid state; a method for preparing the solid of type-B crystal form; and use of the solid of the type-B fenolamine crystal form as a pharmaceutical active ingredient in the manufacture of a medicament for prevention and treatment of Parkinson's disease (PD), improvement of learning and memory disorder, and treatment of memory loss and Alzheimer's disease (AD). 

Type-B fenolamine crystal form, preparation method, composition and use thereof

The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

Method for fabricating a display substrate by generating heat with a light shielding layer for crystallization of a semiconductor layer

The present disclosure relates to polymorphs of 4-[2-dimethylamino-1-(1-hydroxycyclohexyl)ethyl]phenyl 4-methylbenzoate hydrochloride, methods for preparing the same and use of the same.

Polymorphs of 4-[2-dimethylamino-1-(1-hydroxycyclohexyl)ethyl]phenyl 4-methylbenzoate hydrochloride, methods of preparing the same and use of the same

Polymorphs of 4-[2-dimethylamino-1-(1-hydroxycyclohexyl)ethyl]phenyl 4-methyl-benzoate hydrochloride, methods for preparing the same and use of the same

This invention discloses that the five crystal forms of XLF-III-43 can be used as crude drugs. The invention also relates to the preparation methods of the five crystal forms of XLF-III-43 as crude drugs, to the applications of the sterling of the five crystal forms of XLF-III-43 and mixed crystals in different proportions as medicinally active components to develop various kinds of medicines and compound medicines. In addition, this invention also relates to applying the crystal samples of XLF-III-43 as crude drugs to treat kidney dysfunction, cardiocerebral vessel diseases, hypertension, type II diabetic mellitus, complications of hypertension and diabetic mellitus, tumor, precancerosis, edema, and achieves therapeutic effects by enhancing blood drug levels resulted from effects of crystal forms in the processes of treating all kinds of diseases. 

Five crystal forms, methods of preparation, pharmaceutical compositions and applications of XLF-III-43

Two crystalline forms of pinocembrin of formula (I): &#x3b1; and &#x3b2;, their preparation and their use for manufacture of pharmaceutical compositions. There exists difference between them in bioavailability. They are used for treating and preventing cerebral ischemic diseases by protective action of neurovascular unit, and enhancing blood drug level in vivo. 

Two types of crystalline of pinocembrin, their preparation and their use for manufacture of pharmaceutical compositions

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Beijing, China

Yang Lv