National Chung Shan Institute of Science and Technology

Yang-Kuo Kuo

Chun-Te Wu

Jian-Long Ruan

Cheng-Hung Shih

Shyh-Jer Huang

Kuan-Ting Lai

Lea-Hwung Leu

Chia-Yi Hsiang

Chung-Yen Lu

Chia-Ting Lin

Jlin-Fuh Yau

Hsin-Chieh Yu

Hong-Ting Huang

Hung-Tai Ku

The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.

Directly flat-attached switching component for active frequency selective surface and fabricating method thereof

The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

Method for reduction of interfacial stress accumulation between double side copper-plated layers and aluminum nitride substrate

A method of producing a secondary lens with hollow nano structures comprises the following steps (a) forming a polycrystalline seed layer on the surface of a lens; (b) growing a plurality of nano-rod structures over the polycrystalline seed layer in a random arrangement; (c) removing the portion of the seed layer where the nano-rod structure does not grow so that the surface of the lens therebeneath is exposed to outside; (d) sputtering a ceramic material layer over the plurality of nano-rod structures and the exposed surface portion of the lens; (e) removing the plurality of nano-rod structures and leaving a ceramic material layer having a plurality of hollow nano-rod structures in a random arrangement. A layer with hollow nano structures is formed on the surface of a lens wherein the hollow nano structures have the effect of scattering light and can improve the uniform illuminance of a secondary lens.

Method of producing secondary lens with hollow nano structures for uniform illuminance

A method utilizes easily obtained carbon as carbon source for sintering, followed by high energy ball milling process with planetary ball mill for high energy homogenous mixing of the carbon source, solvent and nano-level silicon dioxide powder, along with a high energy ball milling process repeatedly performed using different sized ball mill beads, so as to formulate a spray granulation slurry with the optimal viscosity, to complete the process of micronization of carbon source evenly encapsulated by silicon dioxide powders. The optimal ratio of C/SiOis 1-2.5 to produce a spherical silicon dioxide powder (40-50 &#x3bc;m) evenly encapsulated by the carbon source. The powder is then subjected to a high temperature (1450&#x25a1;) sintering process under nitrogen gas. Lastly, the sintered silicon nitride powder is subjected to homogenizing carbon removal process in a rotational high temperature furnace to complete the fabricating process.

Method for producing spherical silicon nitride powder

The present invention relates to a method for improving adhesion between ceramic and a thick film circuit. The method is particularly directed to accelerate the formation of a ceramic-metal eutectic phase between the ceramic carrier and the metal circuit by solid-phase diffusion bonding under a positive atmosphere. A metallic conductive slurry or its oxide slurry is printed on the surface of the ceramic carrier to form a circuit pattern by a thick film screen printing. The ceramic carrier is placed in an oven with temperature controlled by a program under a positive-pressure atmosphere of an inert gas including nitrogen, hydrogen or their mixtures. An eutectic phase is formed between the ceramic carrier and the metal circuit under a high temperature eutectic condition to increase the adhesion between the ceramic carrier and the thick film circuit.

Method for improving adhesion between ceramic carrier and thick film circuit

A method for preparing spherical aluminum oxynitride powder, comprising the steps of (A) providing an alumina powder and a resin, both of which are then dispersed and dissolved in a solvent to form a mixed slurry; (B) subjecting the mixed slurry to spray drying to form a spherical powder; (C) subjecting the spherical powder to a carbonization treatment under an inert atmosphere to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to carbothermic reduction in a nitrogen-containing atmosphere at a temperature of 1450&#xb0; C. to 1550&#xb0; C.; (E) keeping the spherical powder that has been subjected to carbothermic reduction in the nitrogen-containing atmosphere to carry out a nitridation reaction at a temperature of 1700&#xb0; C. to 1730&#xb0; C., forming a nitrided spherical aluminum oxynitride powder; (F) subjecting the nitrided spherical aluminum oxynitride powder to decarbonization in an oxygen-containing atmosphere to form the spherical aluminum oxynitride powder.

Method for preparing spherical aluminum oxynitride powder

A yellow light photolithographic process and an electroplating process are performed multiple times to produce copper plated layers on the aluminum nitride (AlN) substrate. The copper plated layers are plated in sequence into a stack structure with each layer having reduced length. The parameters of the yellow light photolithographic process can be adjusted, such that each copper plated layer is formed horizontally for a predetermined length into a stack structure of step layers tapering off upward, while a predetermined angle is formed by the tangent line passing through edges of the respective step layers, and the surface of the AlN substrate. An adhesion layer, a copper seed layer, a first copper plated layer, a second copper plated layer, a third copper plated layer, and a nickel plated layer are formed in sequence on the AlN substrate, to form a metalized circuit of multi-layer stack.

Plated-layer structure for improving interface stress between aluminium nitride substrate and copper-plated layer

A method of manufacturing an epitaxiable heat-dissipating substrate comprises the steps of (A) forming a roughened surface on a substrate made of a polycrystalline or amorphous material with a high thermal conductivity coefficient; (B) forming a flat layer on the roughened surface; and (C) forming a buffer layer on the flat layer. The flat layer reduces the surface roughness of the substrate, and then the buffer layer functions as a base for epitaxial growth, thereby being directly applicable to production of semiconductor devices which are flat and capable of isotropic epitaxial growth.

Method of manufacturing epitaxiable heat-dissipating substrate

A three-dimensional integrateds circuit structure includes a first metal circuit substrate, an interposer substrate disposed on the first metal circuit substrate and electrically connected therewith, and at least one semiconductor component disposed on the interposer substrate. The interposer substrate is used to dissipate the heat generated by the operation of the semiconductor components, so as to achieve the objective of increasing the lifespan of the semiconductor components.

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Taoyuan, Taiwan

Yang-Kuo Kuo