X-Fab Semiconductor Foundries Ag

Yang Hao

Deb Kumar Pal

Kia Yaw Kee

Alexander Hoelke

Alexander Dietrich Hölke

Pei Shan Chua

Gopalakrishnan Kulathu Sankar

Uta Kuniss

A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.

Semiconductor device

The disclosed method of manufacturing () a semiconductor device () has the steps () of: forming at least one wall () of a body () of the semiconductor device () by etching at least one trench () for a gate () of the semiconductor device () into the body (); and performing a slanted implantation doping () into the at least one wall () of the body (), after the etching () of the at least one trench () and prior to coating the at least one trench () with an insulating layer (). A semiconductor device () comprises at least one trench () for a gate () of the semiconductor device (); and a body () having at least one wall () of the at least one trench (), wherein a deviation () of a doping concentration () along a distance () in depth-direction (do) of the at least one trench () in a surface () of the at least one wall () is less than ten percent of a maximum value () of the doping concentration () along the distance ().

Manufacturing of a semiconductor device and corresponding semiconductor device

The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.

Semiconductor device comprising an isolation trench including semiconductor islands

Growing community of inventors

Sarawak, Malaysia

Yang Hao