Vishay-Siliconix

Cadence Design Systems, Inc.

Yang Gao

Kyle Terrill

Kuo-In Chen

Sharon Shi

Deva N Pattanayak

Qufei Chen

The-Tu Chau

Igor Keller

Chanho Park

Eric K Anderson

Various embodiments provide for using a timing-based yield calculation to modify a circuit design, which can be part of an electronic design automation (EDA) system. For instance, some embodiments use a timing-based yield calculation to modify one or more portions of the circuit design to improve timing of the circuit design (e.g., slack, slew, delay, etc.), the timing-based yield calculation of the circuit design, or both.

Circuit design modification using timing-based yield calculation

A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a gate oxide layer and an adjacent dielectric layer. The boundary of the gate oxide layer and the dielectric layer is curved to avoid a sharp corner where the gate oxide layer meets the sidewalls of the trench.

Split gate semiconductor device with curved gate oxide profile

Methods of fabricating a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device are described. A column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.

Super junction trench power MOSFET device fabrication

A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent.

Structures of and methods of fabricating split gate MIS devices

In a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device, a column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.

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San Jose, CA, United States of America

Yang Gao