Intel Corporation

Yang-Chun Cheng

Andy Chih-Hung Wei

Dax M Crum

Guillaume Bouche

Shaestagir Chowdhury

Andy Wei

Techniques are provided herein to form semiconductor devices having different work function metals over different devices. The techniques can be used in any number of integrated circuit applications and are particularly useful with respect to gate-all-around (GAA) transistors. In an example, neighboring semiconductor devices each include a different work function to act as the device gate electrode for each semiconductor device. More specifically, a first semiconductor device may be a p-channel GAA transistor with a first work function metal around the various nanoribbons of the transistor, while the second neighboring semiconductor device may be an n-channel GAA transistor with a second work function metal around the various nanoribbons of the transistor. No portions of the first work function metal are present around the nanoribbons of the second semiconductor device and no portions of the second work function metal are present around the nanoribbons of the first semiconductor device.

Dual metal gate structures on nanoribbon semiconductor devices

Techniques to form self-aligned lateral contacts. In an example, a first trench contact contacts a source or drain region of a transistor. A second trench contact includes non-contiguous first and second portions, each portion having a top surface that is co-planar with a top surface of the first trench contact as well as a top surface of the gate structure. A sidewall of the second trench contact is self-aligned to, and interfaces with, a sidewall of the first trench contact. A via extends from the first portion of the second trench contact to an underlying power rail. In some cases, the second portion of the second trench contact extends over a source or drain region of another transistor, without contacting that source or drain region. The fly-over portion of the second trench contact has a maximum height that is shorter than a maximum height of the first trench contact.

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Portland, OR, United States of America

Yang-Chun Cheng