Changxin Memory Technologies, Inc.

Queen's University at Kingston

Hi-Dow Iphc, Inc.

Raytron Technology Co., Ltd.

Yang Chen

Yan-Fei Liu

Bo Sheng

Binghui He

Hao Wang

Zhongyin Liu

Bin Du

Qiangsheng Sun

Luying Meng

Jiwen An

Wenbo Liu

Yinli Jiang

Sheng Li

Shiran Zhang

Xinru Han

Mingxia Cheng

Rong Guang

The application provides a sighting control method based on human detection, a product, a device and a medium. The sighting control method based on human detection includes: acquiring a current scene image in a current field of view of a sighting device; determining whether there is a human target currently being aimed according to a target recognition result of the current scene image and the position of an aiming mark in the current scene image; detecting whether a shooting action occurs if it is determined that there is a target human currently being aimed at; and controlling the sighting device to self-destroy if a shooting action occurs.

Sighting control method based on human detection, product, device and medium

A human detection and warning method includes: acquiring a current scene image within a current field of view of a sighting device; determining whether there is a human target being currently aimed at and/or whether there is currently target tracking of a human target, based on a target recognition result of the current scene image and a position of an aiming mark in the current scene image; and triggering the sighting device to enter an abnormal aiming mode if there is a human target being currently aimed at and/or there is currently target tracking of a human target.

Human detection and warning method, sighting device and computer-readable storage medium

A forming method of a semiconductor structure includes: providing a substrate including an array area and a peripheral area; forming a first insulating dielectric layer in the array area and the peripheral area at the same time, and etching the first insulating dielectric layer and the component dielectric layer in the array area; filling the plurality of trenches; performing back etching on the reference isolation structure and the first insulating dielectric layer; forming a second insulating dielectric layer in the array area and the peripheral area; patterning the second insulating dielectric layer; removing the first insulating dielectric layer in the array area; and removing the second insulating dielectric layer to form a contact material in the contact window.

Semiconductor structure and forming method thereof

A physiotherapy device and a method for controlling the physiotherapy device are provided. The physiotherapy device may include an electric stimulator capable of generating electric pulses, a heating electrode sheet capable of attaching to a user's body, and a connecting component configured to connect with the heating electrode sheet via a plurality of fastening components and configured to connect with the electric stimulator via an electric pulse transmission cable. Furthermore, each fastening component may include a first fastener and a second fastener that are connected with each other. The plurality of fastening components may include a heating fastening component, a heat measuring fastening component, and at least one electric pulse fastening component, the heating fastening component transmits current to the heating electrode sheet so as to provide heat, and the heat measuring fastening component measures a temperature of the heating electrode sheet.

Physiotherapy device and method for controlling physiotherapy device

Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate, and forming a sacrificial dielectric layer on the substrate; patterning a part of the sacrificial dielectric layer along a first direction, and forming a plurality of first trenches arranged at intervals along a second direction in the sacrificial dielectric layer; patterning a part of the sacrificial dielectric layer at bottoms of the first trenches and a part of the substrate below the part of the sacrificial dielectric layer, and forming a plurality of second trenches arranged at intervals below the first trenches, wherein the second trench has a preset depth in the substrate; forming a protective layer on sidewalls of the first trenches and sidewalls of the second trenches; and forming bit line structures in the first trenches and the second trenches.

Semiconductor structure and manufacturing method thereof

A controller for an AC-DC converter including a rectifier circuit that converts AC input voltage into DC output voltage uses control logic to control the rectifier circuit according to two or more operating modes. Each operating mode determines a gain of the rectifier circuit. The controller selects an operating mode from the two or more operating modes based on at least one of an AC input voltage value and a required DC output voltage value. The AC-DC converter provides a wide range of DC output voltage with power factor correction. The controller may be used with AC-DC converter topologies such as boost converter, isolated boost converter, PWM converter, LLC resonant converter, and LCC resonant converter.

Variable gain modulation methods and controllers for AC-DC converter with power factor correction

A portable power station (PPS) unit includes a controller that receives AC current information of AC input current at an AC input port and produces a control signal that is used to control the PPS unit to operate as a voltage source or a current source, and to control an AC output current at substantially the same magnitude, frequency, and phase as the AC input current. A PPS apparatus includes two or more PPS units connected together such that the AC output power of one PPS unit is connected to the AC input port of a next PPS unit; wherein a first PPS unit is a voltage source and each of the second or more PPS units is a current source, and a total AC output power of the PPS apparatus is substantially a sum of the AC output power produced by the two or more PPS units.

Control methods and apparatus for parallel operation of multiple portable power stations

The present disclosure provides a method of manufacturing a capacitor connecting line of a memory and a memory. The method of manufacturing includes: forming a bit line layer and a first dielectric layer on a substrate sequentially; patterning the bit line layer and the first dielectric layer, and forming bit line structures arranged at intervals along a first direction and dielectric structures on tops of the bit line structures; forming an insulating layer on the substrate with the bit line structures and the dielectric structures formed thereon, to completely cover the bit line structures and the dielectric structures; forming second isolation structures arranged at intervals between adjacent bit line structures; and forming conductive structures between first isolation structures and the second isolation structures, and forming storage node contact structures.

Method of manufacturing capacitor connecting line of memory

A control circuit for an isolated power converter includes a first sensing circuit that senses a secondary side output voltage and produces a pulse width modulation (PWM) signal having a duty cycle that is proportional to a value of the secondary side output voltage. The PWM is transferred a cross the converter isolation barrier to the primary side, and a primary side circuit receives the PWM signal and outputs a control signal. A controller determines the value of the secondary side output voltage from the control signal and uses the value to control primary side power switching devices of the isolated power converter to regulate the secondary side output voltage at a selected value.

Methods and circuits for sensing isolated power converter output voltage across the isolation barrier

Display package

The application provides a method for manufacturing a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductors. The method for manufacturing the semiconductor structure includes: providing a base; sequentially stacking an initial conductive layer, an initial first dielectric layer, an initial first mask layer, an initial second dielectric layer, an initial second mask layer and a photoresist layer with a pattern on the base; and etching part of the initial second mask layer, part of the initial second dielectric layer and part of the initial first mask layer by taking the photoresist layer as a mask, so as to form a second dielectric layer with a trapezoidal structure which is of a structure with small top and large bottom.

Growing community of inventors

Hefei, China

Yang Chen