No. 24 Research Institute of China Electronics Technology Group Corporation

Yang Cao

Gangyi Hu

Jianan Wang

Yonghui Yang

Kaizhou Tan

Zhaohuan Tang

Yi Zhong

Yong Liu

Kunfeng Zhu

A semiconductor cell structure and power semiconductor device, wherein, the semiconductor cell structure includes: a highly-doped semiconductor material region, an epitaxial layer, a dielectric insulating layer, a semi-insulating material, and an active device region, a deep groove is further etched on the epitaxial layer, the deep groove vertically extends into the highly-doped semiconductor material region, the dielectric insulating layer is formed on a side wall inside the deep groove, and the deep groove is filled with the semi-insulating material. The cell structure can be applied to the power semiconductor device during actual application, the present invention dramatically reduces the difficulty of the process implementation, relaxes the harsh requirements on charge balance, broadens the tolerant charge mismatch percentage by approximately ten times, and also improves the long-term reliability of normal operation of the device cell at the same time.

Semiconductor cell structure and power semiconductor device

Growing community of inventors

Chongqing, China

Yang Cao