Skhynix Inc.

Korea University Research and Business Foundation

Hyundai Motor Company

Yang Bok Lee

Dae Soon Lim

Seung Cheol Lee

Dong Hyeon Lee

Dong Hee Shin

Il Ho Yang

Sung Ho Choi

Kyung Min Kim

Jun Ho Jang

Yoo Chang Yang

Sang Mun Jin

Suk Min Baeck

Seong Il Heo

Chi Seung Lee

Ji Seong Kim

Seung Koo Lee

A semiconductor device, including: interlayer insulating patterns and conductive patterns alternately stacked on a substrate; a channel structure passing through the interlayer insulating patterns and the conductive patterns; and tapered patterns interposed between the channel structure and the interlayer insulating patterns, spaced apart with any one of the conductive patterns interposed therebetween, and having widths decreased toward the substrate.

Semiconductor device and method of manufacturing the same

Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Polishing composition, method for fabricating thereof and method of chemical mechanical polishing using the same

A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

A separator for a fuel cell and a method for manufacturing the same comprise two sheets of metal plates integrally formed to minimize contact resistance between an upper metal plate and a lower metal plate. The method for manufacturing the separator includes steps of preparing an upper metal plate and a lower metal plate, each plate having opposing main sides, and applying a coating liquid containing a polymer composite material on both sides of the upper and lower metal plates, to form first and second composite material layers on both sides of the upper plates and third and fourth composite material layers on both sides of the lower plates. The method further includes stacking the upper metal plate on the lower metal plate, before drying the respective composite material layers, and integrally bonding the second composite material layer and the third composite material layer to form a single intermediate composite material layer.

Separator for fuel cell and method for manufacturing the same

A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including a bond of silicon (Si) and oxygen (O).

Polishing slurry and chemical mechanical planarization method using the same

Growing community of inventors

Seoul, South Korea

Yang Bok Lee