Alliance for Sustainable Energy, LLC

Midwest Research Institute

Yanfa Yan

Qi Wang

Matthew Robert Page

Tihu Wang

Timothy A Gessert

Timothy J Coutts

Eugene Iwaniczko

Xiaonan Li

Clay M Dehart

Shengbai Zhang

A system and a process for forming a semi-conductor device, and solar cells () formed thereby. The process includes preparing a substrate () for deposition of a junction layer (); forming the junction layer () on the substrate () using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Low temperature junction growth using hot-wire chemical vapor deposition

In a method of making a c-Si-based cell or a &#x3bc;c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH/Hthrough the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH/H.

Method for passivating crystal silicon surfaces

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Method for producing high carrier concentration p-Type transparent conducting oxides

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

High carrier concentration p-type transparent conducting oxide films

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Littleton, CO, United States of America

Yanfa Yan