International Business Machines Corporation

Nuance Communications, Inc.

Globalfoundries Inc.

Yan Zun Li

Chengwen Pei

Zhengwen O Li

Dan Moy

Jian Yu

Chih-Chao Yang

Keith Kwong Hon Wong

Baozhen Li

Chandrasekharan Kothandaraman

Elbert Emin Huang

JunJun Li

Junjing Bao

Charles Willard Cross, Jr

John Matthew Safran

Norman Whitelaw Robson

Pinping Sun

David Jaramillo

Gerald Matthew McCobb

Soonthorn Ativanichayaphong

Charles W Cross

An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.

Electrical fuse with metal line migration

Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. One embodiment of an e-fuse structure includes: a silicon structure; a pair of silicide contact regions overlying the silicon structure; and a silicide link overlying the silicon structure and connecting the pair of silicide regions, the silicide link having a depth less than a depth of each of the pair of silicide contact regions.

Programmable fuse structure and methods of forming

An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.

Reliable electrical fuse with localized programming and method of making the same

An electronic fuse link with lower programming current for high performance and self-aligned methods of forming the same. The invention provides a horizontal e-fuse structure in the middle of the line. A reduced fuse link width is achieved by spacers on sides of pair of dummy or active gates, to create sub-lithographic dimension between gates with spacers to confine a fuse link. A reduced height in the third dimension on the fuse link achieved by etching the link, thereby creating a fuse link having a sub-lithographic size in all dimensions. The fuse link is formed over an isolation region to enhanced heating and aid fuse blow.

High performance e-fuse fabricated with sub-lithographic dimension

A method, system and apparatus for voice enabling a user preference interface in a multimodal content browser. A method for voice enabling a user preference interface in a multimodal content browser can include matching voice input to a bound command in a speech grammar and invoking logic in the user preference interface consistent with the bound command in the speech grammar. The matching step can include comparing voice input to entries in a markup language specified speech grammar and locating the bound command in the specified speech grammar based upon the comparison. In this regard, the method further can include identifying a variable in the bound command, looking up the variable in a table, retrieving a corresponding parameter for the variable from the table, and replacing the variable with the corresponding parameter in the bound command.

Enabling voice selection of user preferences

An electronic fuse structure including a first Mmetal comprising a conductive cap, an Mmetal located above the Mmetal, wherein the Mmetal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mmetal to the Mmetal in a vertical orientation.

Vertical electronic fuse

A three-dimensionally (3d) confined conductor advantageously used as an electronic fuse and self-aligned methods of forming the same. By non-conformal deposition of a dielectric film over raised structures, a 3d confined tube, which may be sub-lithographic, is formed between the raised structures. Etching holes which intersect the 3d confined region and subsequent metal deposition fills the 3d confined region and forms contacts. When the raised structures are gates, the fuse element may be located at the middle of the line (i.e. in pre-metal dielectric). Other methods for creating the structure are also described.

Conductor with sub-lithographic self-aligned 3D confinement

Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. Various embodiments of forming the e-fuse structure include: forming a dummy poly gate structure to contact a surface of a silicon structure, the dummy poly gate structure extending only a part of a length of the silicon structure; and converting an unobstructed portion of the surface of the silicon structure to silicide to form a thinned strip of the silicide between two end regions.

Reliable electrical fuse with localized programming

Method of forming vertical electronic fuse interconnect structures including a conductive cap

An antifuse has first and second semiconductor regions having one conductivity type and a third semiconductor region therebetween having an opposite conductivity type. A conductive region contacting the first region has a long dimension in a second direction transverse to the direction of a long dimension of a gate. An antifuse anode is spaced apart from the first region in the second direction and a contact is connected with the second region. Applying a programming voltage between the anode and the contact with gate bias sufficient to fully turn on field effect transistor operation of the antifuse heats the first region to drive a dopant outwardly, causing an edge of the first region to move closer to an edge of the second region and reduce electrical resistance between the first and second regions by an one or more orders of magnitude.

Secure anti-fuse with low voltage programming through localized diffusion heating

An antifuse can include an insulated gate field effect transistor ('IGFET') having an active semiconductor region including a body and first regions, i.e., at least one source region and at least one drain region separated from one another by the body. A gate may overlie the body and a body contact is electrically connected with the body. The first regions have opposite conductivity (i.e., n-type or p-type) from the body. The IGFET can be configured such that a programming current through at least one of the first regions and the body contact causes heating sufficient to drive dopant diffusion from the at least one first region into the body and cause an edge of the at least one first region to move closer to an adjacent edge of at least one other of the first regions. In such way, the programming current can permanently reduce electrical resistance by one or more orders of magnitude between the at least one first region and the at least one other first region.

Low voltage programmable mosfet antifuse with body contact for diffusion heating

An antifuse is provided having a unitary monocrystalline semiconductor body including first and second semiconductor regions each having the same first conductivity type, and a third semiconductor region between the first and second semiconductor regions which has a second conductivity type opposite from the first conductivity type. An anode and a cathode can be electrically connected with the first semiconductor region. A conductive region including a metal, a conductive compound of a metal or an alloy of a metal can contact the first semiconductor region and extend between the cathode and the anode. The antifuse can further include a contact electrically connected with the second semiconductor region. In this way, the antifuse can be configured such that the application of a programming voltage between the anode and the cathode heats the first semiconductor region sufficiently to reach a temperature which drives a dopant outwardly therefrom, causing an edge of the first semiconductor region to move closer to an adjacent edge of the second semiconductor region, thus permanently reducing electrical resistance between the first and second semiconductor regions by one or more orders of magnitude.

Dynamically generating a vocal help prompt in a multimodal application that include detecting a help-triggering event for an input element of a VoiceXML dialog, where the detecting is implemented with a multimodal application operating on a multimodal device supporting multiple modes of interaction including a voice mode and one or more non-voice modes, the multimodal application is operatively coupled to a VoiceXML interpreter, and the multimodal application has no static help text. Dynamically generating a vocal help prompt in a multimodal application according to embodiments of the present invention typically also includes retrieving, by the VoiceXML interpreter from a source of help text, help text for an element of a speech recognition grammar, forming by the VoiceXML interpreter the help text into a vocal help prompt, and presenting by the multimodal application the vocal help prompt through a computer user interface to a user.

Growing community of inventors

Lagrangeville, NY, United States of America

Yan Zun Li