Globalfoundries Singapore Pte. Ltd.

Yan Zhe Tang

Shyue Seng Tan

Elgin Kiok Quek

Ying Keung Leung

A device and methods for forming a device are disclosed. The device includes a substrate having first, second and third regions. The first region includes a memory cell region, the second region includes a peripheral circuit region and the third region includes a logic region. A memory cell which includes a memory transistor having a first stack height (T) is disposed in the first region. A high voltage (HV) transistor having a second stack height (T) is disposed in the second region and a logic transistor having a third stack height (T) is disposed in the third region. The first, second and third stack heights are substantially the same across the substrate.

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Singapore, Singapore

Yan Zhe Tang