Macronix International Co., Ltd.

Compal Electronics, Inc.

Yan-Yu Chen

Shih-Yu Wang

Yu-Lien Liu

Tao-Cheng Lu

Chia-Ling Lu

Yu-Wen Cheng

Chun-Wen Wang

Wang-Hung Yeh

Che-Shih Lin

Chien-Feng Chan

Chung-Lin Hsieh

Ming-Cheng Tsou

A flexible display, including a stand, a supporting mechanism, a flexible screen, a driving component, a driven component, and a link, is provided. The supporting mechanism is connected to the stand. The flexible screen is attached to the supporting mechanism. The driving component is disposed on the stand. The driven component is disposed on a side of the supporting mechanism distant from the stand. The link has a first end and a second end opposite to the first end. The first end is connected to the driving component, and the second end is connected to the driven component. The driving component drives the driven component through the link to move on a first horizontal plane to drive the supporting mechanism and the flexible screen to transform when the driving component moves between the first horizontal plane and a second horizontal plane that is parallel to the first horizontal plane.

Flexible display

An electronic device including a first body, a supporting member, a second body, and an input assembly is provided. The first body is provided with a front end and a rear end opposite to each other. One terminal end of the supporting member is pivotally connected to the rear end of the first body. The second body is pivotally connected to the other terminal end of the supporting member. The input assembly is rotatably connected to the second body and is suitable for being carried by the first body. When a lower edge of the second body is located at the front end of the first body, the input assembly protrudes out from the front end of the first body.

Electronic device

A portable electronic device includes a host, a sliding base, a base plate, a display and a sliding rotating element. The sliding base is disposed on the host and has at least one guiding portion and at least one sliding slot connected to the guiding portion. The base plate is disposed on the sliding base. The display is pivoted on the base plate. The sliding rotating element is fixed to the base plate and is rotatably and slidably connected to the sliding base, and the display and the base plate are configured to rotate or slide on the sliding base along with the sliding rotating element.

Portable electronic device

An electrostatic discharge tolerant device includes a semiconductor body having a first conductivity type, and a pad. A surrounding well having a second conductivity type is laid out in a ring to surround an area for an electrostatic discharge circuit in the semiconductor body. The surrounding well is relatively deep, and in addition to defining the area for the electrostatic discharge circuit, provides the first terminal of a diode formed with the semiconductor body. Within the area surrounded by the surrounding well, a diode coupled to the pad and a transistor coupled to the voltage reference are connected in series and form a parasitic device in the semiconductor body.

ESD tolerant I/O pad circuit including a surrounding well

An ESD protection circuit including a substrate of a first conductivity type, an annular well region of a second conductivity type, two first regions of the first conductivity type and at least one transistor of the second conductivity type is provided. The annular well region is disposed in the substrate. The first regions are disposed in the substrate and surrounded by the annular well region. The at least one transistor is disposed on the substrate between the first regions and including a source, a gate, and a drain. The annular well region and the drain are coupled to a first voltage source. The source and one of the first regions are coupled to a second voltage source, and the other of the first regions is coupled to a substrate triggering circuit.

Electrostatic discharge protection circuit

A semiconductor device includes a first well region of a first conductivity type, a second well region of a second conductive type within the first well region. A first region of the first conductivity type and a second region of the second conductivity type are disposed within the second well region. A third region of the first conductivity type and a fourth region of the second conductivity type are disposed within the first well region, wherein the third region and the fourth region are separated by the second well region. The semiconductor device also includes a switch device coupled to the third region.

Methods and structures for electrostatic discharge protection

An RC delay circuit for providing electrostatic discharge (ESD) protection is described. The circuit employs an NMOS transistor and a PMOS transistor to produce a large effective resistance using a relatively small circuit layout area.

Electrostatic discharge protectors having increased RC delays

An electrostatic discharge protection device for protecting an inner circuit, which is operated in a source voltage, is provided and includes a protection unit and a control unit. The protection unit provides a discharge path for transmitting an electrostatic signal from a pad to a ground line. According to a voltage level at a control end, the protection unit adjusts a holding voltage and a triggering voltage determining whether to conduct the discharge path. When the source voltage is supplied, the control unit transmits the input voltage to the control end of the protection unit, so as to raise the holding and the triggering voltages of the discharge path. When the source voltage is not supplied, the control unit switches the control end of the protection unit to a floating condition by the electrostatic signal, so as to lower the holding and the triggering voltages of the discharge path.

Electrostatic discharge protection device and method thereof

A semiconductor device includes a first well region of a first conductivity, a second well region of a second conductivity type, a source region of the second conductivity type within the first well region, and a drain region of the second conductivity type at least partially within the second well region. A well contact to the first well region is coupled to the source. A third doped region of the first conductivity type and a fourth doped region of the second conductivity type are located in the second well region. A first transistor includes the third doped region, the second well region, and the first well region. The first transistor is coupled to a switch device. A second transistor includes the second well region, the first well region, and the source region. The first and the second transistors are configured to provide a current path during an ESD event.

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Taipei, Taiwan

Yan-Yu Chen