Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.

Yan Xie

Xuanjun Liu

Liang Sun

Tao Chen

Jianhong Lin

Shasha Li

Lanlan Wang

The present application provides a method for manufacturing a semiconductor, comprising providing a substrate, on which a first, second and third dielectric layers are successively formed, the third dielectric layer having an initial opening; forming a first deposited layer which at least covers a side wall of the initial opening to form a first mask layer having a first opening; removing the second dielectric layer directly below the first opening to expose a side wall of the second dielectric layer; forming a second deposited layer which at least covers the side wall of the first opening and the exposed side wall of the second dielectric layer, to form a second mask layer having a second opening; removing the first dielectric layer directly below the second opening to expose the substrate; and removing the second mask layer, and forming a trench by etching the substrate.

Semiconductor manufacturing method

A display panel and a display device are provided by the present application. The display panel includes a light-transmitting display region, wherein the light-transmitting display region includes a plurality of pixel units, each of the pixel units includes a first electrode layer and an electrode portion electrically connected to the first electrode layer, and the electrode portion and the first electrode layer constitute a first electrode of the pixel unit; and an orthographic projection of the electrode portion on the first electrode layer is located within a boundary of the first electrode layer.

Display panel and display device having first electrode with a plurality of sub-electrodes

The present disclosure provides a display panel and a display device. A through-hole is defined in a bending area of the display panel, and after the bending area is bent along a bending center line, the through-hole forms a light transmitting area, and the light transmitting area is disposed on a light path of an electronic component. Based on the light transmitting area formed after bending the through-hole, the electronic component can be disposed under the display panel, thereby achieving a narrow frame design.

Display panel and display device

A pixel compensation circuit is provided. The pixel compensation circuit includes: a first transistor connected to a first scan line, wherein a first terminal of the first transistor is connected to a data line and a second terminal of the first transistor is connected to a second terminal of the driving transistor; a second transistor connected to a first scan line, wherein a first terminal of the second transistor is connected to a first terminal of the driving transistor and a second terminal of the second transistor is connected to a control terminal of the driving transistor; and a third transistor, wherein a control terminal of the third transistor is connected to a control line, a first terminal of the third transistor is connected to a supply voltage line, and a second terminal of the third transistor is connected to the first terminal of the driving transistor.

Pixel compensation circuit, driving method, and display device

A method for manufacturing a semiconductor device is provided. A substrate is provided, where a cover layer is formed on the substrate, a wiring layer is formed in the cover layer, a layer to be etched is formed on the cover layer, and the layer to be etched includes an adhesive layer. An exposure patterned film layer is formed on the layer to be etched. A first etching hole pattern is formed in the exposure patterned film layer. The layer to be etched is etched to form a blind hole by using the exposure patterned film layer as a mask. The exposure patterned film layer is trimmed to form a second etching hole pattern. The layer to be etched is further etched to form a bonding hole by using the trimmed exposure patterned film layer as a mask. A bonding pad is formed in the bonding hole.

Method for manufacturing bonding pad in semiconductor device

The present application discloses an OLED display device including an OLED display panel. The OLED display panel has a first display area and a second display area disposed around the first display area, wherein a first pixel electrode layer in the first display area includes at least a two-layered indium tin oxide (ITO) conductive layer, and a second pixel electrode layer in the second display area is a three-layered ITO/Ag/ITO conductive layer.

Organic light emitting diode (OLED) display device

An array substrate and a method of manufacturing the same are provided. The array substrate sequentially includes a flexible substrate, a buffer layer, an active layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second gate metal layer, an inter-insulating layer, a first organic filling layer, a source-drain wiring layer, a planarization layer, an anode layer, a pixel defining layer, and a supporting layer from bottom to top; the first organic filling layer is convex upward on the inter-insulating layer, making the source-drain wiring layer covering thereon disposed to be convex. The method of manufacturing the array, substrate is sequentially to manufacture the layers from bottom to top, wherein the convex first organic filling layer disposed on the inter-insulating layer of the array substrate is used to raise a drain thereon.

Array substrate and method for manufacturing array substrate

An array substrate and a display device are provided. The array substrate includes a plurality of first through holes, and a substrate, a first metal layer, an interlayer dielectric layer, and a second metal layer are formed in sequence. The first through holes are defined in the interlayer dielectric layer. The second metal layer is connected to the first metal layer through the first through holes.

Growing community of inventors

Hubei, China

Yan Xie