Industrial Technology Research Institute

Tsinghua University

Yan-Rung Lin

Pei-Wen Yen

Chi-Chang Liao

Kai-Ping Chuang

Shie-Chang Jeng

Chih-Hsiang Liu

Sheng-Min Yu

Chang-Ho Liou

Jau-Min Ding

Chung-Lun Kuo

Chih-Chiang Lu

Wei-Hsin Hou

Hsin-Fei Meng

Kuo-Hua Tseng

Sheng-Fu Horng

Kuan-Wei Chen

Jyh-Wen Shiu

Wen-Ching Ko

Hsing-Lung Wang

Yi-Chen Hsieh

Yi-An Sha

Jyun-Kai Ciou

Hsiang-Chun Wei

Wen-Ching Sun

Chia-Liang Yeh

Jow-Tsong Shy

Hsin-Yi Chen

Jen-Chun Wang

Ming-Kun Lee

Chieh-Yi Lo

Chung-Hao Chen

Ru-De Chen

Yeou-Sung Lin

Siou-Cheng Lou

I-Chun Chen

Chun-Yuan Lin

Yun-Ru Hong

A method for inspecting LED dies includes the following steps. First electrodes and second electrodes of LED dies to be inspected are short-circuited via a conductive layer on an inspection substrate, or an inspection bias voltage is applied between the first electrodes and the second electrodes of the LED dies. An excitation light is irradiated on the LED dies to be inspected on the inspection substrate such that the LED dies to be inspected emit a secondary light. When the first electrodes and the second electrodes of the LED dies to be inspected are open, short-circuited, and/or subjected to the inspection bias voltage, the secondary light is captured via an optical sensor. An output of the optical sensor is received via a computer and a spectrum difference of the secondary light is calculated to determine whether the LED dies are abnormal or to classify the LED dies to be inspected.

Apparatus and method for inspecting light-emitting diode dies

An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.

Inspection apparatus and inspection method for inspecting light-emitting diodes

An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.

Method for inspecting light-emitting diodes and inspection apparatus

A method for inspecting light-emitting diodes (LEDs) including following steps is provided. A plurality of LEDs are provided. A charge distribution, an electrical field distribution, or a voltage distribution on the LEDs that are irradiated by an illumination beam at the same time are inspected by a sensing probe, so as to determine electro-optical characteristics of the LEDs. Besides, an inspection apparatus is also provided.

An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Image sensor and manufacturing method thereof

An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.

Image sensor and image sensing method

An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Image sensor

An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.

A multi-point spectral system includes an imaging lens, an image capturing module and a multiwavelength filter (MWF) disposed between the imaging lens and the image capturing module. The MWF has a plurality of narrow-bandpass filter (NBPF) units arranged in an array, and each of the plurality of NBPF units has a respective predetermined central transmitted wavelength. The multi-point spectral system is provided to capture plural spectral images of a scene, which contain spectral or color information of the scene. The multi-point spectral system may utilize the information of the plural spectral images to recognize features revealed at the scene.

Multi-point spectral system and multi-point spectral module to be mounted on, clipped on or connected to an image capturing module of an electronic device easily

A readout apparatus and a driving method for sensor are provided. The readout apparatus includes an adjustable bias unit, a sensor unit, a signal converting unit, a checking unit and a control unit. The sensor unit senses physical energy and outputs a sensing result by using a bias voltage outputted from the adjustable bias unit. The control unit controls the adjustable bias unit according to the sensing result, so as to adjust the bias voltage. Therefore, the readout apparatus can reduce continuous power loss caused by long-term detection.

Readout apparatus and driving method for sensor

A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes.

Light detecting array structure and light detecting module

An electrical property measuring apparatus for pressure sensor includes a first plate, a second plate, an object to be measured, an electrical property measuring unit used for measuring the electrical properties of the object, and a fluid supplying system. The second plate is opened or closed relative to the first plate. The object is disposed between the first plate and the second plate. The fluid supplying system connects to a space formed by the first plate and a pressed surface or a space formed by the second plate and a pressed surface. The fluid supplying system provides a fluid to the space such that the fluid presses on the object and the electrical property measuring unit measures the electrical properties of the object. A method of measuring electrical property for pressure sensor is also provided.

Electrical property measuring apparatus for pressure sensor and measuring method thereof

The invention is directed to a method for forming a flexible electro-optic film. The method comprises steps of providing a first substrate having a conductive layer formed thereon and then forming a first locating structure over the conductive layer, wherein the locating structure includes target regions and periphery regions. The surface tension of the target regions is difference from that of the periphery regions. Thereafter, an electro-optic medium placing process for forming an electro-optic droplet on each of the target regions is performed. A solidifying process for forming a capsule wall covering the electro-optic droplet on each of the target regions is performed. The first substrate is laminated with a second substrate.

Growing community of inventors

Hsinchu, Taiwan

Yan-Rung Lin