Taiwan Semiconductor Manufacturing Comp. Ltd.

Yan-Jhih Huang

Chun-Yuan Hsu

Yung-Hsieh Lin

Chien-Chung Chen

A method of making a semiconductor device includes forming a circuit layer over a substrate. The method further includes depositing an insulator over the substrate. The method further includes patterning the insulator to define a test line trench, a first trench, and a second trench, wherein the first trench is on a portion of the substrate exposed by the circuit layer. The method further includes filling the test line trench to define a test line electrically connected to the circuit layer. The method further includes filling the first trench and the second trench to define a capacitor.

Method of making semiconductor device including metal insulator metal capacitor

A semiconductor device includes a substrate. The semiconductor device further includes a circuit layer over the substrate. The semiconductor device further includes a test line electrically connected to the circuit layer. The semiconductor device further includes a capacitor on the substrate. The capacitor includes a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer. The capacitor further includes an insulator surrounding the first conductor.

Semiconductor device including metal insulator metal capacitor and method of making

A semiconductor device includes a substrate. The semiconductor device further includes a circuit layer over the substrate. The semiconductor device further includes a test line on the circuit layer. The semiconductor device further includes a capacitor on the substrate. The capacitor includes a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer; a second conductor; and an insulator between the first conductor and the second conductor, wherein the insulator surrounds the first conductor and the second conductor.

Semiconductor device including metal insulator metal capacitor

A metal-insulator-metal (MIM) capacitor includes a semiconductor substrate and a capacitor device. The capacitor device includes a first conductor upright on the semiconductor substrate, a second conductor upright on the semiconductor substrate, and an insulator disposed used for insulating the first conductor from the second conductor. In a method for fabricating the capacitor device, a mask including a test line pattern and a capacitor pattern with a first trench pattern and a second trench pattern is used to form a test line and the first conductor and the second conductor of the capacitor device, thereby decreasing the cost of for fabricating the MIM capacitor.

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Yilan County, Taiwan

Yan-Jhih Huang