Alpha and Omega Semiconductor (cayman) Ltd.

Alpha Omega Semiconductor Inc.

Yan Huo

Ming-Chen Lu

Jun Lu

Yan Xun Xue

Hamza Yilmaz

Zhiqiang Niu

Peter L Wilson

Hua Pan

Hongtao Gao

Zhi Qiang Niu

Aihua Lu

Jianxin Ye

Demei Gong

Guo Feng Lian

A power semiconductor package has a small footprint. A preparation method is used to fabricate the power semiconductor package. A first semiconductor chip and a second semiconductor chip are attached to a front side and a back side of a die paddle respectively. Conductive pads are then attached to electrodes at top surfaces of the first and second semiconductor chips. It is followed by a formation of a plastic package body covering the die paddle, the first and second semiconductor chips, and the conductive pads. Side surfaces of the conductive pads are exposed from a side surface of the plastic package body.

Power semiconductor device with small contact footprint and the preparation method

A hybrid packaging multi-chip semiconductor device comprises a lead frame unit, a first semiconductor chip, a second semiconductor chip, a first interconnecting structure and a second interconnecting structure, wherein the first semiconductor chip is attached on a first die paddle and the second semiconductor chip is flipped and attached on a third pin and a second die paddle, the first interconnecting structure electrically connecting a first electrode at a front surface of the first semiconductor chip and a third electrode at a back surface of the second semiconductor chip and a second electrode at the front surface of the first semiconductor chip is electrically connected by second interconnecting structure.

Hybrid packaged lead frame based multi-chip semiconductor device with multiple interconnecting structures

A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.

Semiconductor device with thick bottom metal and preparation method thereof

Method of hybrid packaging a lead frame based multi-chip semiconductor device with multiple interconnecting structures

An ultrathin power semiconductor package with high thermal dissipation performance and its preparation method are disclosed. The package includes a lead frame unit with a staggered structure including an upper section and a lower section. A thin layer is attached on the surface of the lead frame unit having a plurality of contact holes on the upper section and at least one opening on the lower section. A semiconductor chip is attached on the opening on the lower section of the lead frame unit and then a plurality of metal bumps are deposited, where one metal bump is formed on each contact hole on the upper section and on each of the electrodes on the top surface of the semiconductor chip.

Power semiconductor device and the preparation method

A small and ultra-thin power semiconductor device and a preparation method are disclosed. The device includes a chip mounting unit with a plurality of pads with a plate arranged on top surface of each pad; a semiconductor chip flipped and attached on the chip mounting unit, where the electrodes at the front of the chip are electrically connected to the pads; a plastic packaging body covering the chip mounting units and the chip, where the top surface of the plate and the back surface of the chip are exposed out from top surface of the plastic packaging body and the bottom surfaces of the pads are exposed out of the bottom surface of the plastic packaging body; a plurality of top metal segments arranged on the top surface of the plastic packaging body and electrically connected to the top surface of each plate and the back surface of the chip.

Ultra-thin semiconductor device and preparation method thereof

A semiconductor package includes a lead frame having a die paddle and a plurality of leads connected to die paddle, where each lead has a lead surface parallel to die paddle and is a continuous extension bending upward from die paddle. A semiconductor chip is mounted on die paddle, where drain metal layer covering a first surface of chip is connected to die paddle, and source metal layer and gate metal layer are located on a second surface opposite to first surface with gate metal layer located at one corner of the second surface. A source metal plate and a gate metal plate are attached on source metal layer and gate metal layer respectively. A molding layer covers lead frame, semiconductor chip, source metal plate and gate metal plate, where lead surface, top surfaces of source metal plate and gate metal plate are exposed from top surface of molding layer.

Top-exposed semiconductor package and the manufacturing method

A preparation method of small and ultra-thin power semiconductor device comprising the steps of: providing a chip mounting unit with a plurality of pads with a plate arranged on top surface of each pad; flipping and attaching a semiconductor chip on the chip mounting unit, where the electrodes at the front of the chip are electrically connected to the pads; forming a plastic packaging body covering the chip mounting units and the chip, where the top surface of the plate and the back surface of the chip are exposed out from top surface of the plastic packaging body and the bottom surfaces of the pads are exposed out of the bottom surface of the plastic packaging body; forming a plurality of top metal segments arranged on the top surface of the plastic packaging body and electrically connected to the top surface of each plate and the back surface of the chip.

Hybrid packaged lead frame based multi-chip semiconductor device with multiple semiconductor chips and multiple interconnecting structures

A semiconductor package is provided with an Aluminum alloy lead-frame without noble metal plated on the Aluminum base lead-frame. Aluminum alloy material with proper alloy composition and ratio for making an aluminum alloy lead-frame is provided. The aluminum alloy lead-frame is electroplated with a first metal electroplating layer, a second electroplating layer and a third electroplating layer in a sequence. The lead-frame electroplated with the first, second and third metal electroplating layers is then used in the fabrication process of a power semiconductor package including chip connecting, wire bonding, and plastic molding. After the molding process, the area of the lead-frame not covered by the molding compound is electroplated with a fourth metal electroplating layer that is not easy to be oxidized when exposing to air.

Growing community of inventors

Shanghai, China

Yan Huo