Lam Research Corporation

Novellus Systems Incorporated

Yan Guan

Raashina Humayun

Deqi Wang

Feng Chen

Hanna Bamnolker

Abhishek Manohar

Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.

Method for depositing extremely low resistivity tungsten

Methods of producing low resistivity tungsten bulk layers having low roughness and associated apparatus are provided. According to various embodiments, the methods involve CVD deposition of tungsten at high pressures and/or high temperatures. In some embodiments, the CVD deposition occurs in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen.

Method for depositing tungsten film with low roughness and low resistivity

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Cupertino, CA, United States of America

Yan Guan