Samsung Electronics Co., Ltd.

University of California

Massachusetts Institute of Technology

Globalfoundries Inc.

Xilinx, Inc.

Broadcom Corporation

Florida State University Research Foundation, Inc.

University of Florida Research Foundation, Incorporated

Amazon Technologies, Inc.

University of Texas System

Lawrence Berkeley National Laboratory

Other

Asml Netherlands B.v.

Netlogic Microsystems, Inc

Intellectual Ventures I LLC

Yan E Wang

Lincoln James Miara

Eran Pisek

Gerbrand Ceder

Jasmin Oz

William D Richards

Jongwook Kye

Yihan Xiao

Hyeokjo Gwon

Lei Yuan

Jusik Kim

Naoki Suzuki

Ryounghee Kim

SeWon Kim

Sungkyun Jung

Jae Chul Kim

Yan-Yan Hu

Yingzhi Sun

Jianzhong Zhang

Mahbub Rashed

Andrew Gabriel Rinzler

Jia Zeng

Nui Chong

Xin X Wu

Tomoyuki Tsujimura

Jeong-Ju Cho

Rajib Kumar Das

Bin Ouyang

Chenchen Wang

KyuJung Jun

Hai-Ping Cheng

Farooq Khan

Young-Han Nam

Louay A Jalloul

Arogyaswami J Paulraj

Sam Padinjaremannil Alex

Nihar Jindal

Murat Mese

Young-Gyoon Ryu

Amin Mobasher

Wenhui Wang

Hong-Tsz Pan

Yuansheng Ma

Bang-Thu Nguyen

Xuezhang Dong

Xuyong Feng

Nanfang Hu

Xin Tu

Monica Leigh Farrar Miller

Jimin Kim

Srikanth Ramakrishna

Robert Neil Gaa Torres

Yonius Saritoh

Matthew T Svihovec

Shikhar Singh

Lakshminarayanan Angamuthu

Vinay Nadagoud

Pradeep Rajvin Dinakar

Sawankumar Patel

James D Bennett

Jin-Kyu Han

Joonyoung Cho

Dinesh Somasekhar

Guillaume Bouche

Suresh Venkatesan

Ali Keshavarzi

James Karp

Chandrasekaran Sakthivel

Yuichi Aihara

Subramani Kengeri

Kit S Lam

Sirikiat Lek Ariyavisitakul

Victor Roev

Mien-Chie Hung

Navneet Jain

Yixiang Wang

Myungjin Lee

Youngtag Woo

Jian Zhang

Jin Guo

Yunfei Deng

Yuhao Luo

Qi Lin

Thomas M Henige

Ronald Webb

Jane W Sowards

David Doman

Yuezhen Fan

Zhiwen Kang

Jaffer Ajani

Jonathan Jung-Ching Ho

Valentina Lacivita

Colin P Dinney

Masoud Aryanpour

Hui-Wen Lin

Sang Bok Ma

Derek John Foster

Jonathan J Ho

Wenwu Xiao

Bogdan A Czerniak

A solid-state ion conductor including a compound of Formula 1:LiAM(SeO)X  Formula 1wherein, in Formula 1, A is an element of Groups 1 or 11, or a combination thereof, M is an element of Groups 2 to 17, or a combination thereof, wherein an oxidation state a of M is 2≤a≤7, X is a cluster anion having an oxidation state of b, wherein −3≤b≤−1, 0<(4−x−a−(b+2)y)≤2, x≥0, and 0≤y≤2.

Solid-state lithium-ion conductor and methods of manufacture thereof

A solid-state ion conductor includes a compound of Formula 1:LiMXNOA  Formula 1wherein, in Formula 1, M is Ta, Nb, V, or a combination thereof, X is an element having an oxidation state of n, wherein n is +1, +2, +3, +4, or a combination thereof, A is an element having an oxidation state of m, wherein m is −1, −2, or a combination thereof, and 0<a≤2 and 0≤b≤1.

Solid-state electrolyte, solid-state battery including the electrolyte, and method of making the same

Solid conductor, preparation method thereof, solid electrolyte including the solid conductor, and electrochemical device including the solid conductor

An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.

Inspection apparatus and method

A solid-state ion conductor including a compound of Formula 1:LiB(PA1O)  Formula 1wherein, in Formula 1, A1 is an element of Groups 4, 14, or a combination thereof, and has an oxidation state of +4, and 0<y1<1.

Techniques for controlling an interface of a multi-input modality device are described. In an example, a device presents a menu on a display in a first input modality mode of the device. The menu includes graphical user interface (GUI) elements. The first input modality mode corresponds to a first type of input modality. The device receives first input corresponding to a second type of input modality. The device presents the menu on the display in a second input modality mode of the device that corresponds to the second type of input modality. The first input modality mode and the second input modality mode are exclusive to each other and each provide a different menu navigation control. The device changes a presentation of a visual indicator at a first location associated with a first GUI element of the GUI elements in the menu based on the second input modality mode.

Controlling interface of a multi-input modality device

A solid-state ion conductor including a compound of Formula 1:LiAMXO  Formula 1wherein, in Formula 1, A is an element of Groups 1 to 3 or 11 to 13, or a combination thereof, wherein an oxidation state a of A is 1≤a≤3, M is an element having an oxidation state of +4 of Groups 4 or 14, or a combination thereof, X is an element having an oxidation state of +5 of Groups 5, 15, 17, or a combination thereof, and 0<y≤1.

An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1LiMMMO  (1)wherein Mis a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; Mis a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; Mis a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

Electronic device comprising a dielectric material and methods for the manufacture thereof

A solid-state ion conductor includes a compound of Formula (I):LiMMM&#x2033;OXX&#x2003;&#x2003;Formula (I)wherein, Mis a cationic element having an oxidation state of +2 or +3; Mis a cationic element having an oxidation state of +4 or +5; M&#x2033; is a cationic element having an oxidation state of &#x3b3;, wherein &#x3b3; is less than b; Xis a cluster anion having an oxidation state of (&#x2212;1-&#x3b4;), wherein &#x3b4; is 0 or 1; Xis a halogen; 0&#x3c;c&#x2264;1; 0&#x2264;x&#x2264;1; and 0&#x2264;y&#x2264;2.

The present disclosure provides methods and compositions for the detection of bladder in a subject using four locus-specific probes to 6p22, 8q22, 11q13, and 20p11.2.

Multi-color fish test for bladder cancer detection

A solid-state ion conductor includes a compound of Formula (I):LiBOXX&#x2003;&#x2003;Formula (I)wherein, in Formula (I), 0&#x2264;x&#x2264;1; Xis a pseudohalogen; Xis a halogen; and 0&#x3c;a&#x2264;1.

A solid-state ion conductor includes a compound of Formula 1:LiNClX&#x2003;&#x2003;Formula 1wherein, in Formula 1, X is an anion having an average oxidation state of n and is &#x2212;3&#x2264;n&#x2264;&#x2212;1, and is at least one of Br, I, F, O, S, or P; and 1&#x2264;a&#x2264;4, 1&#x2264;b&#x2264;3, 0&#x3c;c&#x2264;3, and 4.8&#x2264;(a+b+c)&#x2264;5.2.

A compound of Formula 1LiHfM(PO)&#x2003;&#x2003;(1)is disclosed, wherein M is at least one cationic element having a valence of a, wherein 0&#x3c;&#x3b1;&#x2264;&#x2154;, 1&#x2264;a&#x2264;4, and 0&#x2264;&#x3b4;&#x2264;0.1. Also described are an electrolyte composition, a separator, a protected positive electrode, a protected negative electrode, and a lithium battery, each including the compound of Formula 1.

Lithium-ion solid state conductor containing a compound of LiHfM(PO), Electrode and battery including the conductor, and methods of manufacture thereof

Examples described herein generally relate to wafer testing and structures implemented on a wafer for wafer testing. In an example method for testing a wafer, power is applied to a first pad in a test site (TS) region on the wafer. The TS region is electrically connected to a device under test (DUT) region on the wafer. The DUT region includes a DUT. The TS region and DUT region are in a first and second scribe line, respectively, on the wafer. A third scribe line is disposed on the wafer between the TS region and the DUT region. A signal is detected from a second pad in the TS region on the wafer. The signal is at least in part a response of the DUT to the power applied to the first pad.

Wafer testing and structures for wafer testing

Growing community of inventors

Cambridge, MA, United States of America

Yan E Wang