Skyworks Solutions, Inc.

Avago Technologies International Sales Pte. Limited

Yalin Jin

Setu Mohta

Philip Howard Thompson

Reza Kasnavi

Ying Shi

Srivatsan Jayaraman

Ethan Chang

Kenneth Norman Warren

Omar Mustafa

Jeesu Kim

Yuan Luo

Shang Wang

An RF multiplexing switching circuit for an RF front end (e.g., for a mobile communications device transmitting/receiving in the RF region) includes a set of RF inputs and a set of RF outputs outputting to RF filters, the RF inputs and outputs connected by signal paths. The switching circuit includes series switches for creating conducting signal paths for transmitting/receiving RF signals between the RF inputs and outputs, and a set of common shared shunt switches (e.g., for M RF inputs and N RF outputs, M+X shunt switches, where X<N) collectively capable (e.g., in conjunction with the series switches) of pulling to ground potential any RF input and output not on the conducting signal path. The RF switching circuit may be implemented as a band select switch (e.g., where the inputs connect to power amplifiers) or an antenna switch (e.g., where the inputs connect to device antennas).

Configurable radio frequency (RF) multiplexing switch for RF front end in 4G/5G applications

Circuitry, modules, devices, and methods for integrating front-end carrier aggregation architecture are disclosed. In some embodiments, a method can include providing a packaging substrate configured to receive a plurality of components. The method can also include providing a front-end architecture implemented on the packaging substrate, the front-end architecture including a switching assembly configured to provide switching for two or more frequency bands, the switching assembly including at least one coupler configured to couple a signal associated with the switching assembly, and a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Devices and methods related to integrated front-end architecture modules for carrier aggregation

Circuitry, modules and devices for integrating front-end carrier aggregation architecture, are disclosed. In some embodiments, a front-end architecture includes a switching assembly configured to provide switching for two or more frequency bands. In some embodiments, the switching assembly includes at least one coupler configured to couple a signal associated with the switching assembly. The front-end architecture can also include a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Integrated front-end architecture modules for carrier aggregation

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Integrated CMOS transmit/receive switch in a radio frequency device

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures. A compensation circuit can act to protect the receive path during an RF transmit mode.

Transmit-receive isolation in a transformer-based radio frequency power amplifier

Embodiments of radio frequency (RF) systems include a power amplifier having a primary winding and a secondary winding. The primary winding can be biased in different states in transmit and receive modes such that a difference between center frequencies of the primary winding and the secondary winding are significantly different in the different modes.

Growing community of inventors

San Jose, CA, United States of America

Yalin Jin