Micron Technology Incorporated

Other

Yakov Shor

Dror Horvitz

Alexander Ripp

Eyal Bar-sadeh

Nuriel Amir

Semeon Altshuler

Maor Rotlain

Yigal Alon

Valery Shumilin

Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

Selective polymer growth on a semiconductor substrate

A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and seamless.

Method of high aspect ratio plug fill

High rate selective polymer growth on a substrate

In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.

Forming low dielectric constant dielectric materials

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Beer Sheva, Israel

Yakov Shor