Technion Research & Development Foundation Limited

Todos Technologies Ltd.

Bluebird Optical Mems Ltd.

Other

Rafael-armament Development Authority Ltd.

Steag C.v.d. Systems Ltd.

Yael Nemirovsky

Amikam Nemirovsky

Eran Socher

Sara Stolyarova

Igor Brouk

Ofir Degani

Dan Seter

Arkadiy Morgenshtein

David Elata

Uri Dinnar

Sharon Bar-Lev Shefi

Shmuel Melman

Vitali Savuskan

Ofir Bochobza-Degani

Amos Fenigstein

Dan Corcos

Joseph Shamir

Joseph Yahalom

Lior Gal

David Starosvetsky

Tomer Leitner

Benjamin Brosilow

Elena Sidorov

Arye Peyser

Shmuel Kaldor

Ehud Netzer

Yoav Shoham

Shlomo Katz

Alexander Svetlitza

Robert Beserman

Victor Sidorov

Raoul Weil

Madlena Dolgin

Mark Kovler

Gil Visokolov

Tomer Merhav

Yehuda Sinai

Alexander Katz

Moshe Weinstein

Avi Shai

Oflr Bochobza-Degani

A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

Gas sensing device having distributed gas sensing elements and a method for sensing gas

A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Gas sensing device and a method for sensing gas

There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.

Differential mode detection circuit

There is provided a gas sensing device for sensing a certain gas that is associated with a certain spectral band, the gas sensing device may include a passive gas sensor that is configured to generate passive gas sensor detection signals that are responsive to the certain spectral band; a passive dummy sensor that is configured to generate passive dummy sensor detection signals that are indifferent to the certain spectral hand; and at least one circuit that is configured to detect a presence or absence of the certain gas within a certain volume that is located within the fields of view of the passive gas sensor and the passive dummy sensor based on a comparison between the passive gas sensor detection signals and the passive dummy sensor detection signals.

A sensing device that may include a substrate; a single-ended SPAD; first electrical components; second electrical components; and capacitors. The SPAD, the first electrical components and the second electrical components are formed on the substrate. The SPAD and the first electrical components belong to a high voltage domain of the sensing device. The high voltage domain is configured to receive a high supply voltage that exceeds a breakdown voltage of the SPAD. The second electrical components belong to a low voltage domain of the sensing device. The capacitors are coupled between the low voltage domain and the high voltage domain. The first electrical components and the second electrical components belong to an electrical circuit that is configured to perform quenching of the SPAD.

Sensing device comprising electrical components of high voltage domain and low voltage domain to perform quenching of a single photon avalanche diode

A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Robust GMOs

A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Multi layered thermal sensor

A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

A pressure sensing device that includes a pressure sensing element that is of microscopic scale and has a pressure level dependent thermal parameter; a signal source that is configured to supply an input electrical signal to the pressure sensing element; and a monitor that is configured to (a) measure electrical output signals generated by the pressure sensing element as a result of the supply of the input electrical signal and (b) estimate a pressure level applied on the pressure sensing element based on the electrical output signals.

Pressure level sensing device and a method for sensing pressure

A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.

Sensing device having a BiCMOS transistor and a method for sensing electromagnetic radiation

A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muzzle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muzzle flash.

Muzzle flash detection

A sensing device includes an array of sensing elements. Each sensing element includes a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor. An individual reflector is formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation.

Sensor array with self-aligned optical cavities

A method and a sensing device are provided. The sensing device may include: a thermal antenna that includes a resistive material and has a cross section that has dimensions that are of an order of a micron or of a sub-micron. The thermal antenna may receive electromagnetic radiation and directly convert it to heat. The sensing device may also include a supporting element, a thermal sensor arranged to generate detection signals responsive to a temperature of a sensed area of the thermal sensor, a holding element that may support and thermally isolate the thermal antenna and the thermal sensor and thermally isolate, and a readout circuit that may process the detection signals to provide information about the electromagnetic radiation that is directly converted to heat by the thermal antenna. The thermal antenna and the thermal sensor are spatially separated from the supporting element.

Sensing device having a thermal antenna and a method for sensing electromagnetic radiation

An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.

Ion sensitive detector

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.

Device having an avalanche photo diode and a method for sensing photons

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Haifa, Israel

Yael Nemirovsky