Boe Technology Group Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Yabin An

Yang Wang

Xiaowei Liu

Bo Liu

Zheng Liu

Zhonghao Huang

Chao Fan

Chenglong Wu

Zhiyong Fan

Fanqing Meng

The present disclosure provides a thin film transistor and a fabrication method thereof, and an array substrate. The thin film transistor formed on a base substrate, the thin film transistor includes: an active layer; a first signal metal layer, provided on a surface of the active layer facing the base substrate; a second signal metal layer, provided on a surface of the active layer facing away from the first signal metal layer, wherein, the active layer includes a conductive channel formation region, and the second signal metal layer does not cover the conductive channel formation region of the active layer.

Thin film transistor, fabrication method therefor, and array substrate

The present disclosure provides in some embodiments an oxide TFT display substrate, a manufacture method thereof and a display device. The oxide TFT display substrate includes a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region. The method includes steps of: forming, after the formation of the oxide TFT, a SiON layer at least covering the first region; and forming a SiNx layer covering the second region.

Oxide thin film transistor display substrate, manufacturing method thereof, and display device

Growing community of inventors

Beijing, China

Yabin An