Taiwan Semiconductor Manufacturing Comp. Ltd.

Ya Yun Liu

Hui Yu Lee

Chi-Wen Chang

Yi-Kan Cheng

Jui-Feng Kuan

Chia-Chung Chen

Hui-Zhong Zhuang

Yi-Ting Lin

Yu-Tseng Hsien

Heng Kai Liu

Chih-Liang Chen

Yung-Chow Peng

Jaw-Juinn Horng

Chung-Hui Chen

Wen-Shen Chou

Szu-Lin Liu

Tsung-Hsin Yu

Chih Ming Yang

A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.

Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure

The present disclosure describes structure with a substrate, a first well region, a second well region, and a third well region. The first well region is in the substrate. The second well region is in the first well region and includes a first source/drain (S/D) region. The third well region is in the substrate and adjacent to the first well region. The third well region includes a second S/D region, where a spacing between the first and second S/D regions is less than about 3 μm.

Cell placement optimization

A semiconductor device includes a first semiconductor well. The semiconductor device includes a channel structure disposed above the first semiconductor well and extending along a first lateral direction. The semiconductor device includes a gate structure extending along a second lateral direction and straddling the channel structure. The semiconductor device includes a first epitaxial structure disposed on a first side of the channel structure. The semiconductor device includes a second epitaxial structure disposed on a second side of the channel structure, the first side and second side opposite to each other in the first lateral direction. The first epitaxial structure is electrically coupled to the first semiconductor well with a second semiconductor well in the first semiconductor well, and the second epitaxial structure is electrically isolated from the first semiconductor well with a dielectric layer.

Semiconductor devices and methods of manufacturing thereof

A method of making a semiconductor device includes determining a temperature profile for a first die of a three-dimensional integrated circuit (3DIC), wherein the first die comprises a plurality of sub-regions of the first die based on the determined temperature profile. The method further includes simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions.

Method for making a semiconductor device

A system including a memory; and a simulation tool connected to the memory. The simulation tool is configured to receive information related to a plurality of dies. The simulation tool is further configured to receive a plurality of input vectors. The simulation tool is further configured to determining a temperature profile for a first die of the plurality of dies. The simulation tool is further configured to simulate operation of a second die of the plurality of dies based on the determined temperature profile and the received plurality of input vectors.

System for manufacturing a semiconductor device

An apparatus includes a first tier and a second tier. The second tier is above the first tier. The first tier includes a first cell. The second tier includes a second cell and a third cell. The third cell includes a first inter layer via (ILV) to couple the first cell in the first tier to the second cell in the second tier. The third cell further includes a second ILV, the first ILV and the second ILV are extended along a first direction. The first tier further includes a fourth cell. The second tier further includes a fifth cell. The second ILV of the third cell is arranged to connect the fourth cell of the first tier with the fifth cell of the second tier. In some embodiments, the second tier further includes a spare cell including a spare ILV for engineering change order (ECO) purpose.

Method and apparatus of a three dimensional integrated circuit

A method of making a semiconductor device includes determining a temperature profile for a first die of a three-dimensional integrated circuit (3DIC). The method further includes identifying a plurality of sub-regions of the first die based on the determined temperature profile. The method further includes simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions. The method further includes manufacturing the semiconductor device.

Method of manufacturing a semiconductor device

A method of making a three-dimensional (3D) integrated circuit (IC) includes performing a series of simulations of operations of a first die of the 3DIC in response to a corresponding series of input vectors and at least one environment temperature. The method also includes adjusting, for at least one simulation in the series of simulations, the at least one environment temperature based on an operational temperature profile of a second die of the 3DIC.

Method and system for manufacturing a semiconductor device

A method includes generating a schematic of an integrated circuit (IC), the IC having a circuit component. The method also includes searching a database having one or more configurations of the circuit component, each of the one or more configurations of the circuit component having a corresponding estimated resistance capacitance (RC) value and an assigned color scheme based on the estimated RC value. The method further includes displaying the circuit component in the schematic as a symbol representing the circuit component, the symbol representing the circuit component being displayed having the assigned color scheme of a selected circuit component configuration.

Integrated circuit design method and system with color-coded components

A method comprises: receiving a circuit design comprising networks of first devices fabricated by a first fabrication process; selecting second devices to be fabricated by a second process; substituting the second devices for the first devices in the networks of the circuit design; sorting the second devices within a selected one of the networks by device area from a largest device area to a smallest device area; and assigning each second device in the selected network to be fabricated in a respective tier of a plurality of tiers of a three dimensional integrated circuit (3D IC) for which a total area of second devices previously assigned to said respective tier is the smallest, the second devices being assigned sequentially according to the sorting.

Partitioning method and system for 3D IC

A method comprises generating a schematic of an integrated circuit (IC), the IC having a circuit component. The method also comprises searching a database having one or more configurations of the circuit component, each of the one or more configurations of the circuit component having a corresponding estimated resistance capacitance (RC) value and an assigned color scheme based on the estimated RC value. The method further comprises displaying the circuit component in the schematic as a symbol representing the circuit component, the symbol representing the circuit component being displayed having the assigned color scheme of a selected circuit component configuration. The method additionally comprises displaying a layout of the IC based on a determination that the schematic passed a design rule check, the displayed layout of the IC including the selected configuration of the circuit component, the selected configuration being displayed in the layout having the assigned color scheme.

Integrated circuit design system with color-coded component loading estimate display

An apparatus includes a first tier and a second tier. The second tier is above the first tier. The first tier includes a first cell. The second tier includes a second cell and a third cell. The third cell includes a first ILV to couple the first cell in the first tier to the second cell in the second tier. The third cell further includes a second ILV, the first ILV and the second ILV are extended along a first direction. The first tier further includes a fourth cell. The second tier further includes a fifth cell. The second ILV of the third cell is arranged to connect the fourth cell of the first tier with the fifth cell of the second tier. In some embodiments, the second tier further includes a spare cell including a spare ILV for ECO purpose.

A non-transitory, computer readable storage medium is encoded with computer program instructions, such that, when the computer program instructions are executed by a computer, the computer performs a method. The method generates mask assignment information for forming a plurality of patterns on a layer of an integrated circuit (IC) by multipatterning. The mask assignment information includes, for each of the plurality of patterns, a mask assignment identifying which of a plurality of masks is to be used to form that pattern, and a mask assignment lock state for that pattern. User inputs setting the mask assignment of at least one of the plurality of patterns, and its mask assignment lock state are received. A new mask assignment is generated for each of the plurality of patterns having an 'unlocked' mask assignment lock state.

Multi-patterning system and method using pre-coloring or locked patterns

A method of designing a semiconductor device is performed by at least one processor. In the method, a first environment temperature for a first substrate is determined based on an operational temperature of a second substrate, the first and second substrates stacked one upon another in the semiconductor device. An operation of at least one first circuit element in the first substrate is simulated based on the first environment temperature.

Method, system and computer program product for designing semiconductor device

A method comprises: receiving a circuit design comprising networks of first devices fabricated by a first fabrication process; selecting second devices to be fabricated by a second process; substituting the second devices for the first devices in the networks of the circuit design; sorting the second devices within a selected one of the networks by device area from largest device area to smallest device area; and assigning each second device in the selected network to be fabricated in a respective one of a plurality of tiers of a 3D IC for which a total area of second devices previously assigned to that tier is smallest, the second devices being assigned sequentially according to the sorting.

Growing community of inventors

Jhubei, Taiwan

Ya Yun Liu