Advanced Optoelectronic Technology, Inc.

Epistar Corporation

Zhongshan Innocloud Intellectual Property Services Co., Ltd.

E Ink Holdings Inc.

Yenrich Technology Corporation

Ya-Wen Lin

Po-Min Tu

Shih-Cheng Huang

Ching-Hsueh Chiu

Chia-Hung Huang

Shun-Kuei Yang

Tzu-Chien Hung

Chi-Chih Pu

Tzu-Hsiang Wang

Min-Hsun Hsieh

Chia-Hui Shen

Chien-Shiang Huang

Chien-Chung Peng

Pei-Lin Huang

Jai-Tai Kuo

Chang-Hsieh Wu

Yi-Ming Wu

Li-Yuan Huang

Pei-Yu Li

A pixel package includes an electrode structure, a plurality of light-emitting units arranged on the electrode structure, and a light transmitting layer. The electrode structure has an upper layer with a first upper sheet, a lower layer with a first lower sheet, and a supporting layer arranged between the upper layer and the lower layer. The electrode structure and the plurality of light-emitting units are fully embedded in the light transmitting layer. In a top view of the pixel package, the first upper sheet is overlapped with and larger than the first lower sheet.

Pixel package and method of making the same

Light-emitting device

An electronic device includes a top carrier having a first top surface and a first bottom surface, a first electronic element formed on the first top surface, a second electronic element formed on the first bottom surface, a bottom carrier below the top carrier and having a second top surface near the top carrier, and a controller formed on the second top surface.

Electronic device

A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Detection method for light emitting diode chip

A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Manufacturing method for light emitting diode crystal grains using adhesive layer on auxiliary substrate to fill gaps between light emitting diode crystal grains

A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Method for manufacturing light emitting diode

An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

Light emitting diode die and manufacturing method thereof

A display device including a first common electrode, an active device array substrate, a display medium layer and a power system is provided. The active device array substrate includes a plurality of scan lines, a plurality of data lines, a plurality of transistors, a plurality of pixel electrodes and a second common electrode. Each of the transistors is electrically connected to one scan line and one data line, and the pixel electrodes are electrically connected to the transistors, respectively. The second common electrode and the pixel electrodes form a plurality of storage capacitors. The display medium layer is disposed between the first common electrode and the active device array substrate. The power system is electrically connected to the first common electrode and the second common electrode through two separated conductive routes, respectively. A reset method of a display device is also provided.

Display device and reset method thereof

A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.

Light emitting diode and method for manufacturing the same

A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.

Flip chip light emitting diode and method for manufacturing the same

The present disclosure provides a light emitting diode package including a substrate, a first electrode and a second electrode located on a first surface of the substrate, a plurality of light emitting diodes (LEDs) located between the first electrode and the second electrode, a plurality of retaining ring located on the first surface of the substrate. The LEDs are surrounded by the retaining ring therein. An encapsulation layer is mounted in the retaining ring and covers the LEDs therein. The encapsulation layer includes a first surface and an side surface extending from edges of the first surface. The side of the encapsulation layer contacts an inner surface of the retaining ring. The present disclosre also provides a method for manufacturing the above light emitting diode package.

Light emitting diode package and method thereof

A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.

Light emitting diode chip and method of manufacturing same

An epitaxial substrate for growing a lighting emitting structure of a light emitting diode, includes a transparent base, a first buffer layer and a second buffer layer formed on the transparent base. The transparent base includes a first surface and a second surface opposite to the first surface. Plural protrusions are formed on the first surface of the transparent base. Each first buffer layer is formed on the outer surfaces of the plural protrusions. The second buffer layer fills in the recesses defined between two adjacent protrusions, and covers the first buffer layer. The refractive index of the first buffer layer is larger than that of the transparent base, and is less than that of the second buffer layer. This disclosure also relates a method for manufacturing the epitaxial substrate and a light emitting diode having the same.

Growing community of inventors

Hsinchu, Taiwan

Ya-Wen Lin