Chung Shan Institute of Science and Technology

Ya-Tung Cherng

Wen-How Lan

Jia-Ching Lin

Yuh-Der Shiang

Ker-Jun Lin

Kai-Fung Perng

Shih-Yen Lin

Si-Chen Lee

Shiang-Feng Tang

A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Nitride based semiconductor laser diode device with a bar mask

An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.

Structure of quantum dot light emitting diode and method of fabricating the same

Growing community of inventors

Taoyuan, Taiwan

Ya-Tung Cherng