Vanguard International Semiconductor Corporation

Ya-Sheng Liu

Shih-Ming Chen

Hsiao-Ying Yang

Chih-Ping Lin

Pi-Kuang Chuang

Hung-Li Chang

A laterally diffused metal oxide semiconductor transistor. The laterally diffused metal oxide semiconductor transistor includes a substrate, a drain formed thereon, a source formed on the substrate, comprising a plurality of individual sub-sources respectively corresponding to various sides of the drain, a plurality of channels formed in the substrate between the sub-sources and the drain, a gate overlying a portion of the sub-sources and the channels, and a drift layer formed in the substrate underneath the drain.

Laterally diffused metal oxide semiconductor transistors

A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.

Semiconductor device and fabrication method thereof

A semiconductor structure including a substrate, a first well, a second well, a third well, a first doped region, and a second doped region. The substrate includes a first conductive type. The first well includes a second conductive type and is formed in the substrate. The second well includes the second conductive type and is formed in the first well. The third well includes the first conductive type, is formed in the substrate, and neighbors the first well. The first doped region includes the first conductive type and is formed in the first well. The second doped region includes the first conductive type and is formed in the first well. The first well surrounds all surfaces of the first and the second doped regions.

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Ya-Sheng Liu