United Microelectronics Corp.

Ya-Lan Chiou

Chun-Hsien Huang

Yu-Tse Kuo

Shu-Ru Wang

Chun-Yen Tseng

Yi-Ting Wu

Chang-Hung Chen

Shu-Wei Yeh

Cheng-Tung Huang

Jen-Yu Wang

Yung-Ching Hsieh

Jian-Jhong Chen

Po-Chun Yang

Chih-Wei Tsai

Hsin-Chih Yu

Bo-Chang Li

Jhen-Siang Wu

A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Layout pattern of magnetoresistive random access memory

A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

A memory includes (n&#x2212;1) non-volatile cells, (n&#x2212;1) bit lines and a current driving circuit. Each of the (n&#x2212;1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n&#x2212;1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n&#x2212;1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n&#x2212;1) non-volatile cells.

Memory including non-volatile cells and current driving circuit

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Tainan, Taiwan

Ya-Lan Chiou