University of California

At&t Bell Laboratories

Lucent Technologies Inc.

Agere Systems Guardian Corp.

At+t Corp.

Agere Systems Optoelectronics Guardian Corp.

The Water Initative, LLC

Ya-Hong Xie

Michel Ranjit Frei

Eugene A Fitzgerald, Jr

Tae-Sik Yoon

Allan James Bruce

Joseph Shmulovich

Sergey Luryi

King-Ning Tu

Martin L Green

Kwok K Ng

Daniel Brasen

Janet L Benton

Owen Liang

Paul J Silverman

Chang-Ching Yeh

Alexei Glebov

Renuka P Jindal

Jeehwan Kim

Eugene A Fitzgerald

Thomas A Langdo

Clifford Alan King

William Thomas Cochran

Shahriar Moinian

Nathan R Belk

Jenn-Ming Kuo

Mark Richard Pinto

Harry T Weston

Donald Paul Monroe

Carl V Thompson

Thi-Hong-Ha Vuong

David Clayton Goldthorp

Pu Wang

Bin Shi

Richard Renjilian

Systems and methods for characterizing biological specimens, which may involve identifying a cell type or state corresponding to a disease or health condition of a subject. A biological specimen is subjected to electromagnetic radiation for spectroscopic analysis such as Surface Enhanced Raman Spectroscopy (SERS) to determine the relative abundance of proteins or amino acids in the cells, which is used in a comparison to previously stored relative abundance data of a database to automatically identifies at least one of cell type and/or cell state of the cells (or the disease/health state of the subject with the disease state including the possibility of virus infection, or drug susceptibility of a subject to bacteria or fungus). The method may also be employed with biological entities or cellular structures such as exosomes and even protein or nucleic acid fragments to determine disease states or health states of the subject.

Spectroscopic biological material characterization

An optical probe includes an optical fiber with a first end and a second end, and an enhanced surface on a portion of the first end of the optical fiber. The enhanced surface includes a patterned base layer including multiple protruding nano-pyramids, an intermediate layer over the patterned base layer, and a graphene layer over the intermediate layer. Using a layer of graphene to cover the enhanced surface increases the sensitivity of a surface-enhanced Raman spectroscopy (SERS) process performed in conjunction with the enhanced surface, and further increases the chemical stability and bio-compatibility of the enhanced surface. Further, placing the enhanced surface at the end of the optical fiber provides a self-contained probe for use with a SERS process, thereby allowing for in-vivo characterization of a sample.

Optical fiber-based hybrid SERS platform for in vivo detection of bio-molecules

Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Water purification and enhancement systems

A spin injection device and spin transistor including a spin injection device. A spin injection device includes different semiconductor materials and a spin-polarizing ferromagnetic material there between. The semiconductor materials may have different crystalline structures, e.g., a first material can be polycrystalline or amorphous silicon, and a second material can be single crystalline silicon. Charge carriers are spin-polarized when the traverse the spin-polarizing ferromagnetic material and injected into the second semiconductor material. A Schottky barrier height between the first semiconductor and ferromagnetic materials is larger than a second Schottky barrier height between the ferromagnetic and second semiconductor materials. A spin injection device may be a source of a spin field effect transistor.

Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor

A spin injector for use in a microelectronic device such as a field effect transistor (FET) is disclosed. The spin injector includes an array of ferromagnetic elements disposed within a semiconductor. The ferromagnetic elements within the array are arranged and spaced with respect to one another in a close arrangement such that electrons or holes are spin-polarized when passing through. The spin injector may be located above or at least partially within a source region of the FET. A spin injector structure may also be located above or at least partially within the drain region of the FET. The spin injector includes a semiconductor material containing an array of ferromagnetic elements disposed in the semiconductor material, wherein adjacent ferromagnetic elements within the array are separated by a distance within the range between about 1 nm and 100 nm.

Spin injector

A device having an optically active region includes a silicon substrate and a SiGe cladding layer epitaxially grown on the silicon substrate. The SiGe cladding layer includes a plurality of arrays of quantum dots separated by at least one SiGe spacing layer, the quantum dots being formed from a compound semiconductor material.

Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers

An integrated circuit laminate with a metal substrate for use with high performance mixed signal integrated circuit applications. The metal substrate provides substantially improved crosstalk isolation, enhanced heat sinking and an easy access to a true low impedance ground. In one embodiment, the metal layer has regions with insulation filled channels or voids and a layer of insulator such as unoxidized porous silicon disposed between the metal substrate and a silicon integrated circuit layer. The laminate also has a plurality of metal walls or trenches mounted to the metal substrate and transacting the silicon and insulation layers thereby isolating noise sensitive elements from noise producing elements on the chip. In another embodiment, the laminate is mounted to a flexible base to limit the flexion of the chip.

Low crosstalk substrate for mixed-signal integrated circuits

A device for forming a self-assembled film on a substrate containing a film precursor includes a first heating member and a second heating member disposed adjacent to the first heating member, the second heating member being separated from the first heating member by a gap. The device includes a movable pusher member configured for advancing the substrate from the first heating member to the second heating member.

System for controlling nucleation in self-assembled films

Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.

Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications

A method of forming a stressed thin film on a substrate includes forming a plurality of islands on a viscous layer that is present on a surface of a substrate. Adjacent islands are bridged with a stressor layer. The structure is annealed at an elevated temperature above the glass flow temperature of the viscous layer to transfer at least a portion of the stress from the stressor layer to the underlying islands. The bridges are then removed to expose the stressed islands of thin film on the substrate.

Method of forming dislocation-free strained thin films

A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.

Quantum dot based optoelectronic device and method of making same

A modulator for an optical transceiver is disclosed. The modulator has two quarter-wave stack mirrors composed of alternating dielectric layers with an optically absorbing layer sandwiched in between to form the vertical resonant cavity. The optically absorbing layer is made of semiconductor nanocrystals embedded in a dialectic material. The device is configured to operate near the saturation point of the absorption layer. By adjusting the biasing voltage across the absorption layer, the saturation threshold of the semiconductor nanocrystals is altered, resulting in the overall reflectivity of the resonant cavity to vary. The modulator is configured to be fabricated as the extension of the backend process of Si CMOS.

Optical transceiver integratable with silicon VLSI

A method for controlling dislocation position in a silicon germanium buffer layer located on a substrate includes irradiating one or more regions of the silicon germanium layer with a dislocation inducing agent and depositing a strained silicon germanium layer on the substrate. The dislocation inducing agent may include ions, electrons, or other radiation source. Dislocations in the silicon germanium layer are located in one or more of the regions. The substrate and strained silicon germanium layer may then be subjected to an annealing process to transform the strained silicon germanium layer into a relaxed state. A top layer of strained silicon or silicon germanium may be deposited on the relaxed silicon germanium layer. Semiconductor-based devices may then be fabricated in the non-damaged regions of the strained silicon or silicon germanium layer. Threading dislocations are confined to damaged areas which may be transformed into SiOisolation regions.

Method for controlling dislocation positions in silicon germanium buffer layers

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Beverly Hills, CA, United States of America

Ya-Hong Xie