Boe Technology Group Co., Ltd.

Xuyuan Li

Chunsheng Jiang

Wei Liu

Liqiang Chen

Hongda Sun

Meili Wang

Xiaming Zhu

Changcheng Xu

A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain. The thin film transistor further comprises a copper alloy layer which is arranged on a side of the gate facing the active layer.

Thin film transistor and method for fabricating the same, array substrate and display device

The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor comprises an active layer, a source and a drain, the source comprising a source first conductive layer and a source first buffer layer, the drain comprising a drain first conductive layer and a drain first buffer layer; at least a part of an upper surface of the source first buffer layer and at least a part of an upper surface of the drain first buffer layer being in contact with a lower surface of the active layer, at least a part of a side wall of the source first conductive layer and at least a part of a side wall of the drain first conductive layer being in contact with the active layer, the side wall of the source first conductive layer and the side wall of the drain first conductive layer in contact with the active layer being formed with an oxide layer. The composition of the active layer of the above thin film transistor would not be damaged by the source first conductive layer and the drain first conductive layer, in which way higher electron mobility can be guaranteed for the thin film transistor, and the thin film transistor is maintained in a good electric property and stability.

Thin film transistor, thin film transistor manufacturing method and array substrate

An embodiment of the present disclosure provides an organic electroluminescent transistor array substrate, including a substrate, and a gate layer, a gate insulating layer, a semiconductor layer, a source layer, a pixel defining layer, an electroluminescent layer and a drain layer formed on the substrate, wherein, the source layer and the drain layer are located in different levels, the source layer includes plural source electrode units corresponding to sub-pixel units respectively, the pixel defining layer includes plural pixel defining units corresponding to the source electrode units respectively, and the respective source electrode units are embedded within the pixel defining units corresponding thereto.

Organic electroluminescent transistor array substrate and fabrication method thereof, and display device

A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.

Thin-film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display apparatus

A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate layer disposed on the substrate, a gate insulating layer disposed on the gate layer, a pixel defining layer disposed on the gate insulating layer, the pixel defining layer includes a plurality of defining regions, a light emitting layer in the defining regions of the pixel defining layer disposed on the gate insulating layer, wherein the light emitting layer includes an electron excitation layer, a light excitation layer and a hole excitation layer, and a source/drain layer disposed on the light emitting layer. According to an embodiment of the present disclosure, light emission and control of light emission can be realized merely by a three-layer structure of a gate layer, a light emitting layer and a source/drain layer, and compared with the OLED light emitting structure of the prior art, the layer structure is simpler, the light emitted is less blocked, and luminous efficiency is higher.

Display substrate, manufacturing method and driving method thereof, and display device

A bottom emission organic electroluminescence display, a preparation method thereof, and a display apparatus are provided. The display includes a base substrate (), and at least one dielectric thin film layer group () and a thin film transistor () that are successively arranged on the base substrate; each dielectric thin film layer group () comprising at least two stacked dielectric thin film layers (), the refractive indices of which are increased progressively from the base substrate towards the thin film transistor. Because at least one group of at least two stacked dielectric thin film layers, the refractive indices of which are increased progressively from the base substrate towards the thin film transistor, are added between the base substrate and the thin film transistor, not only the reflectance of the surface of the metal layers contained in the thin film transistor () may be decreased, but also the loss rate of the emitted light may be decreased, thereby improving the image quality and display effect.

Bottom emission organic electroluminescence display device, preparation method thereof, and display apparatus

The present invention discloses a pixel defining layer and a manufacturing method thereof, a display panel and a display device. The pixel defining layer comprises a first pixel defining layer and a second pixel defining layer stacked on the first pixel defining layer, wherein the first pixel defining layer has a plurality of first openings corresponding to light-emitting regions of respective sub-pixels in one-to-one correspondence, the second pixel defining layer has a plurality of second openings corresponding to the first openings in one-to-one correspondence, a cross section of the first opening is in a regular trapezoidal shape which is narrow at top and wide at bottom, and a cross section of the second opening is in an inverted trapezoidal shape which is wide at top and narrow at bottom. The present invention can effectively avoid the short between the anode and the cathode and the open of the cathode.

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Beijing, China

Xuyuan Li