Boe Technology Group Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Xunze Zhang

Jian Wang

Wenjun Zhang

Sangsoo Park

Xiaokun Wang

Qingliang Wen

Hualu Wang

Wei Shan Dong

Huan Liu

Liang Peng

Hao Zhu

Hu Wang

Liang Xiao

Yunqi Zhang

Daowu Huang

Guanjie Cheng

Dong Ding

Zhaobo Wang

Lei Sha

Leilei Lv

Liumin Yu

Weihua Fang

Zengzhi Xuan

Yanrui Shen

Zhiyuan Dong

Jinwei Huang

Longlong Duan

Gan Song

A guide rail oiling tool includes: a sliding body, which is capped on a guide rail and slidable along the guide rail, and has an inner side surface facing a surface to be oiled of the guide rail, a shape of the inner side surface being matched with a shape of the surface to be oiled of the guide rail; an oil inlet disposed on the sliding body; and an oiling groove in communication with the oil inlet, disposed on the inner side surface of the sliding body and surrounding the surface to be oiled of the guide rail, so that the oiling groove applies oil to the surface to be oiled of the guide rail when the sliding body is sliding.

Guide rail oiling tool

It is provided a magnetron-sputtering coating system including a sputtering chamber. The sputtering chamber therein includes: a set of target, formed by concatenating a plurality pieces of target; a substrate carrier, arranged to be opposite to the target set, and support a substrate to be coated with a film; and a driving device, arranged to drive the substrate carrier to reciprocate in a direction of the arrangement of the target.

Magnetron-sputtering coating system and method, and display substrate

The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.

Thin film transistor and manufacturing method thereof, array substrate, and display apparatus

Growing community of inventors

Beijing, China

Xunze Zhang