Pmc-sierra, Inc.

Pmc-sierra Us, Inc.

Xun Cheng

Graeme Barclay Boyd

William Michael Lye

Ariel D E Sibley

Bijit Thakorbhai Patel

The invention provides an electrostatic discharge (ESD) protection device for protecting the internal circuitry of an integrated circuit chip from ESD current. The device includes a natively doped substrate having high resistance. A first well is formed in the substrate including a discharge circuit. A second well is formed in the substrate separated from the first well by the width of a natively doped region. The natively doped region has the same connectivity type and substantially the same doping profile as the substrate. During an ESD event, current leaking through the natively doped region between the discharge circuit and the second well creates a voltage that triggers the discharge circuit when reaching its trigger voltage. The resistance ratio between the natively doped region and the well is about 10 times or greater. The high resistance of the natively doped region can achieve the trigger voltage with a smaller ESD current leaking through, which decreases the size of the ESD protection device and increases its performance and sensitivity. Thus, the invention provides for more robust and cost effective ESD protection devices.

Semiconductor device for electrostatic discharge protection

Transistor structures for relatively even current balancing within a device and methods for fabricating the same are disclosed. These devices can be used in relatively compact MOSFET Electrostatic Discharge (ESD) protection structures, such as in snapback devices. One embodiment utilizes a salisided exclusion layer for segmentation of the source and/or drain diffusion areas, while the others utilize poly for segmentation of the source and/or drain area. Also, diffusion is used generically herein and, for example, includes implants. These techniques provide relatively good ESD tolerance while consuming a relatively small amount of area, and provide significant area and parasitic capacitance reduction over the state of the art without sacrificing ESD performance. These techniques are also applicable to current balancing within relatively high current devices, such as drivers.

Methods for forming fully segmented salicide ballasting (FSSB) in the source and/or drain region

A semiconductor device is provided for preventing Latch-up in Silicon Controlled Rectifiers (SCRs) when these SCRs become activated. Embodiments of the invention use a natively doped region having high resistance to separate the NPN transistor from the PNP transistor that form the SCR, and/or to isolate the entire SCR from the injector source in order to prevent latch-up. The high resistance of the natively doped region allows to achieve the separation resistance needed in a smaller space, as compared to the space required to achieve the same separation resistance in a well. Accordingly, the invention provides for more robust and cost effective latch-up prevention devices.

Semiconductor device for latch-up prevention

A negative electrostatic discharge (ESD) protection network or circuit is described. The circuit can provide protection against a negative-going ESD transient. One embodiment, along with standard positive ESD protection networks, can discharge ESD currents in both polarities and is able to tolerate a positive/negative voltage that is higher than the maximum voltage allowed for the given fabrication process. It can be used to protect an I/O pin that can be exposed to a relatively wide signal swing range.

Growing community of inventors

Chengdu, China

Xun Cheng