Boe Technology Group Co., Ltd.

Zhao, Baosheng

Wang, Xueyong

Xueyong Wang

Yan Chen

Zhi Hu Wang

Xiangjun Tian

Lei Chen

Chen Hui Xu

Feng Guan

Chao Li

Guangcai Yuan

Feng Wang

Lu Wang

Liwei Liu

Jianhua Du

Qingrong Ren

Guozhong Jiang

Baosheng Zhao

The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.

Thin film transistor and method for manufacturing a thin film transistor

A method for manufacturing a display substrate is provided to include: forming an amorphous silicon layer on a base substrate; irradiating at least part of the display region through a mask plate with a laser, to convert a portion of the amorphous silicon layer in the irradiated part of the display region corresponding to channel regions of active layers of transistors into polycrystalline silicon by a laser annealing process; irradiating at least part of the peripheral region with a laser, to convert the amorphous silicon layer in the irradiated part of the peripheral region into polycrystalline silicon; and forming the active layers of the transistors from the amorphous silicon layer which is converted to polycrystalline silicon by a patterning process.

Method for manufacturing display substrate

The present disclosure relates to the field of display technology, and in particular relates to a light shielding structure and a laser device. The light shielding structure comprises a first light shielding plate group and a second light shielding plate group, each of the first light shielding plate group and the second light shielding plate group comprises at least one light shielding plate, and the at least one light shielding plate can be moved relatively for forming at least two light transmitting regions. The light shielding structure can realize partial scanning of multiple target regions at a time, thereby saving production time, increasing production efficiency, saving water and electricity and other resources, and prolonging the laser lifetime.

Light shielding structure and laser device

A laser device is provided. The laser device includes: a laser tube having an opening in both ends thereof, and a fixing apparatus on at least one of the ends of the laser tube. The opening in at least one of the ends of the laser tube is sealed by the fixing apparatus. A movable assembly and a window are provided on the fixing apparatus. The window is movable relatively to the opening of the laser tube when being driven by the movable assembly, to change a transmission position of a laser light generated by the laser tube on the window.

Laser device

The embodiments of the present disclosure provide an optical device and an excimer laser annealing equipment. The optical device includes: a light source; a transparent window spaced apart from the light source by a distance; and an optical system disposed between the light source and the transparent window. The transparent window is configured such that emergent light of the light source is vertically incident onto the transparent window after passing through the optical system.

Optical device and excimer laser annealing equipment

A transfer apparatus includes a supporting member, a free electron excitation device and a detection device; the free electrons excitation device is configured to excite semiconductor material of an object to be transferred to generate free electrons, and the detection device is configured to detect whether material of a surface of the transferred object in contact with the support surface of the supporting member is conductive under excitation by the free electron excitation device. A laser annealing apparatus comprising the transfer apparatus is further provided.

Transfer apparatus and laser annealing apparatus

A hydraulic jack includes an oil cylinder, an oil tank, and an oil storage barrel. The oil storage barrel includes a front portion and a back portion which are opposite to each other; an oil outlet of the oil cylinder is connected with an oil inlet at the front portion of the oil storage barrel by means of an oil inlet pipe; and an oil inlet of the oil tank is connected with an oil outlet at the front portion of the oil storage barrel by means of an oil outlet pipe, the oil inlet pipe and the oil outlet pipe are provided with switching valves for alternatively turning on the oil inlet pipe and the oil outlet pipe. A partition plate that is capable of moving along a barrel wall and an elastic telescoping member are provided inside the oil storage barrel.

Growing community of inventors

Beijing, China

Xueyong Wang