Beijing Naura Microelectronics Equipment Co., Ltd.

Beijing Nmc Co., Ltd.

Xuewei Wu

Jun Zhang

Henan Zhang

Boyu Dong

Bingliang Guo

Shaohui Liu

Baogang Xu

Ming Wang

Tong Wang

Xu Bin Liu

Jinrong Zhao

Wen Tao Zhang

Bo Geng

Huaichao Ma

Yujie Geng

Guoqing Qiu

Yangchao Li

Kangning Zhao

Qingxuan Wang

Yaxin Cui

The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.

Loading apparatus and physical vapor deposition apparatus

The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.

Deposition apparatus and physical vapor deposition chamber

A heating device and a heating chamber are provided, comprising a base plate (), at least three supporting columns () and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (). The heating assembly includes a heating light tube () and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

Heating device and heating chamber

Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a tubby structure and having an upper end which is an open end, and the isolation window being arranged at the open end of the chamber body and used for sealing the chamber. The chamber further includes an isolation window fixing structure used for fixing the isolation window at the open end of the chamber body and a first fixing part and a second fixing part connected with each other, the first fixing part being fixedly connected with an edge area of an upper surface of the isolation window, and the second fixing part being fixedly connected with the chamber body.

Chamber

Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Magnetron source, magnetron sputtering apparatus and magnetron sputtering method

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Beijing, China

Xuewei Wu