International Business Machines Corporation

Other

Bluestone Technologies (cayman) Limited

Xuesong Li

Shu-Jen Han

Lian Guo

Junjing Bao

Yu-Ming Lin

Ageeth Anke Bol

Shaoning Yao

Samuel S S Choi

Chun-Yung Sung

Xin M Zhao

An apparatus and method for graphene film synthesis. The apparatus includes a quasi-enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi-enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

Substrate holder for graphene film synthesis, and uses thereof

An electroplating etching apparatus includes a power to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.

Electrochemical etching apparatus

An apparatus and method for graphene film synthesis. The apparatus includes a quasi enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

Substrate holder for graphene film synthesis

An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

Semiconductor interconnect structure having a graphene-based barrier metal layer

An electroplating etching apparatus includes a power supply to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.

Aspects of the invention are directed to a method for forming a hybrid structure. Initially, a wire is received and an encapsulating film is deposited on the wire. Subsequently, the wire is selectively removed to leave a hollow tube formed of the encapsulating film. A plurality of active particles are then placed into the hollow tube by immersing the hollow tube in a suspension comprising the plurality of active particles and a liquid. Lastly, the hollow tube and the plurality of active particles therein are removed from the suspension and allowed to dry so as to form a cluster of active particles at least partially encapsulated by the encapsulating film.

Graphene hybrid structures for energy storage applications

A method for synthesizing a thin film, the method containing the steps of: (a) providing a substrate support assembly containing at least two selectively interdigitable substrate support fixtures; (b) loading a substrate for thin film synthesis onto said at least two fixtures; (c) interdigitating said at least two fixtures; (d) positioning said at least two fixtures in a reaction chamber and forming a thin film on a surface of the substrate; and (e) unloading the substrate from said at least two fixtures.

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Yorktown Heights, NY, United States of America

Xuesong Li