Yangtze Memory Technologies Co., Ltd.

Xueqing Huang

Yali Song

Jianquan Jia

XiangNan Zhao

Kaikai You

Ying Cui

Lei Jin

Shan Li

An Zhang

Kaiwei Li

Meng Lou

Jinlong Zhang

Wei Huang

Kang Li

Cong Luo

Lu Qiu

Xing Zhou

Chan Wang

Fengxiang Gao

Yao Chen

Junyao Zhu

A memory includes at least a target word line and a first word line group and a second word line group respectively stacked on both sides of the target word line. The first word line group includes first word lines, and the second word line group includes second word lines. A method for operating the memory includes, during a pre-charge operation, applying a first bias voltage signal to the plurality of first word lines, applying a second bias voltage signal to a target word line, and applying a third bias voltage signal to the plurality of second word lines. The method also includes, during a programming operation, applying a program voltage signal to a target word line.

Operation method of memory, memory, memory system, and electronic device

A memory device includes a memory cell array including memory blocks and a peripheral circuit coupled to the memory cell array. Each memory block includes memory strings each including dummy cells and select transistors, bit lines coupled to the memory strings, select lines including first select lines and second select lines, and one or more dummy word lines. Each select line coupled to the select transistors. The first select lines are closer to the bit lines than the second select lines. Each dummy word line is coupled to the respective dummy cells. The dummy word lines include a first dummy word line adjacent to either the first select lines or the second select lines. The peripheral circuit is configured to apply a turn-on voltage to all the first select lines, and apply a program voltage to the first dummy word line.

Memory device with dummy word line, system and method for programming thereof

A method for operating a memory is disclosed. The memory includes a first group of word lines, a second group of word lines, a first dummy word line, and a second dummy word line. The first dummy word line and the second dummy word line are between the first group of word lines and the second group of word lines. A first pass voltage is applied to the first dummy word line and applying a second pass voltage to the second dummy word line. A program voltage is applied to a selected word line, wherein a condition is met: a first voltage difference between the first pass voltage and a first threshold voltage of a first dummy cell corresponding to the first dummy word line is different from a second voltage difference between the second pass voltage and a second threshold voltage of a second dummy cell corresponding to the second dummy word line.

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

A memory includes an upper deck and a lower deck. The upper deck includes a first upper dummy word line. The lower deck includes a first lower dummy word line. A method for reducing program disturbance of the memory includes adjusting a first upper bias voltage applied to the first upper dummy word line and/or a first upper threshold voltage of the first upper dummy word line to adjust a first difference between the first upper bias voltage and the first upper threshold voltage; and adjusting a first lower bias voltage applied to the first lower dummy word line and/or a first lower threshold voltage of the first lower dummy word line to adjust a second difference between the first lower bias voltage and the first lower threshold voltage.

Growing community of inventors

Wuhan, China

Xueqing Huang