Globalfoundries U.S. Inc.

Xueqiang Dai

Wei Zhao

Xiaoli Hu

Xiaoxiao Li

Xiaohua Cheng

Shuangdi Zhao

Xi Cao

Yuqing Sun

Embodiments of the disclosure provide a circuit structure and related method to compensate for sense amplifier leakage. A circuit structure according to the disclosure includes a reference voltage generator coupling a supply voltage and a reference line to a sense amplifier. A multiplexer within the reference voltage generator is coupled to the reference line. The multiplexer includes a plurality of transistors each having a gate terminal coupled to ground.

Circuit structure and related method to compensate for sense amplifier leakage

The present disclosure relates to integrated circuits, and more particularly, to a sense amplifier circuit for current sensing in a memory structure and methods of manufacture and operation. In particular, the present disclosure relates to a circuit including: a sensing circuit including a first set of transistors, at least one data cell circuit, and a reference cell circuit; a reference voltage holding circuit comprising a second set of transistors and a bitline capacitor; and a comparator differential circuit which receives a data sensing voltage signal from the sensing circuit and a reference voltage level from the reference voltage holding circuit and outputs an output signal.

Sense amplifier circuit for current sensing

Growing community of inventors

Nanjing, China

Xueqiang Dai