Intermolecular, Inc.

Applied Materials, Inc.

Kla Tencor Corporation

Patterson + Sheridan Llp

Xuena Zhang

Dipankar Pramanik

Tae Kyung Won

Dong-Kil Yim

Sergey V Barabash

Soo Young Choi

Yi Cui

Michael S Bakeman

Peter Nunan

Harvey You

Mankoo Lee

Wan-Yu Lin

Rodney Shunleong Lim

Wenqing Dai

Yun-chu Tsai

Won Ho Sung

Hsiao-Lin Yang

Hao-Chien Hsu

Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.

Interface engineering for high capacitance capacitor for liquid crystal display

Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

Oxygen vacancy of IGZO passivation by fluorine treatment

Methods and systems for performing relatively high energy X-ray Fluorescence (XRF) measurements and relatively low energy X-ray photoelectron spectroscopy (XPS) measurements over a desired inspection area of a specimen are presented. Combined XPS and XRF measurements of a specimen are achieved with illumination tailored to each respective metrology technique. A high brightness, high energy x-ray illumination source is employed in combination with one or more secondary fluorescence targets. The high energy x-ray illumination source supplies high energy x-ray illumination to a specimen to perform high energy XRF measurements. In addition, the high energy x-ray illumination source supplies high energy x-ray illumination to one or more secondary fluorescence targets. The one or more secondary fluorescence targets absorb some of the high energy x-ray photons and emit x-ray emission lines at a lower energy. The relatively low energy x-ray illumination is directed to the specimen to perform relatively low energy XPS measurements.

X-ray based metrology with primary and secondary illumination sources

The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.

Combo amorphous and LTPS transistors

Embodiments of the present disclosure generally relate to methods and devices for use of low temperature polysilicon (LTPS) thin film transistors in liquid crystal display (LCD) and organic light-emitting diode (OLED) displays.

SiON gradient concept

A doped fullerene-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the doped fullerene-based electrode, e.g., the conduction band minimum of the dielectric falls into one of the band gaps of the doped fullerene-based material, thermionic leakage through the dielectric can be reduced, since the excited electrons or holes in the electrode would need higher thermal excitation energy to overcome the band gap before passing through the dielectric layer.

Fullerene-based capacitor electrode

Embodiments of the present invention include diffusion barriers, methods for forming the barriers, and semiconductor devices utilizing the barriers. The diffusion barrier comprises a self-assembled monolayer (SAM) on a semiconductor substrate, where one surface of the SAM is disposed in contact with and covalently bonded to the semiconductor substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer. In some embodiments, the barrier comprises an assembly of one or more monomeric subunits of the following structure: Si&#x2014;(CH)-(LM)where n is from 1 to 20, y is from 2n&#x2212;2 to 2n, m is 1 to 3, L is a Group VI element, and M is a metal, such as copper. In some embodiments, (CH) can be branched, crosslinked, or cyclic.

Diffusion barriers

Embodiments of the present invention include low emissivity (low-E) coatings and methods for forming the coatings. The low-E coating comprises a self-assembled monolayer (SAM) on a glass substrate, where one surface of the SAM is disposed in contact with and covalently bonded to the glass substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer. In some embodiments, the low-E coating comprises an assembly of one or more monomeric subunits of the following structure: Si&#x2014;(CH)-(LM)where n is from 1 to 20, y is from 2n&#x2212;2 to 2n, m is 1 to 3, L is a Group VI element, and M is a metal, such as silver. In some embodiments, (CH) can be branched, crosslinked, or cyclic. The coating can further comprise an antireflection coating on the metal layer.

Low-emissivity coatings

Electrodes, which contain molybdenum dioxide (MoO) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no molybdenum element, together with a portion of molybdenum oxide, e.g., MoOwith x between 2 and 3. The molybdenum oxide can be present as molybdenum trioxide MoO, or in Magneli phases, such as MoO, MOO, or MoO. The molybdenum-dioxide containing electrodes can be formed by annealing a multilayer including a layer of molybdenum and a layer of molybdenum oxide. The oxygen content of the multilayer can be configured to completely, or substantially completely, react with molybdenum to form molybdenum dioxide, together with leaving a small excess amount of molybdenum oxide MoOwith x&#x3e;2.

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San Jose, CA, United States of America

Xuena Zhang