Globalfoundries Singapore Pte. Ltd.

Xueming Dexter Tan

Xinfu Liu

Kiok Boone Elgin Quek

Eng Huat Toh

A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (V) implant is performed with a desired level of second polarity type dopants into the substrate. The Vimplant forms a Vadjust region to obtain a desired Vof a transistor. A co-implantation with diffusion suppression material is performed to form a diffusion suppression (DS) region in the substrate. The DS region reduces or prevents segregation and out-diffusion of the Vimplanted second polarity type dopants. A transistor of a first polarity type having a gate is formed in the device region. First and second diffusion regions are formed adjacent to sidewalls of the gate.

Semiconductor device with improved narrow width effect and method of making thereof

High voltage devices and methods for forming a high voltage device are disclosed. The high voltage device includes a substrate prepared with a device isolation region. The device isolation region defines a device region. The device region includes at least first and second source/drain regions and a gate region defined thereon. A device well is disposed in the device region. The device well encompasses the at least first and second source/drain regions. A primary gate and at least one secondary gate adjacent to the primary gate are disposed in the gate region. The at least first and second source/drain regions are displaced from first and second sides of the primary gate.

Growing community of inventors

Singapore, Singapore

Xueming Dexter Tan