Hoffmann-la Roche Inc.

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

F. Hoffmann-la Roche Ag

Xuemei Wang

Jing Xiong

Urs Schwitter

Katja Grosse-Sender

Frank Stowasser

Roland Meier

Junli Chen

Yan Lin Ren

Jianhua Yu

Fugang Chen

Manuel Konrath

Yun Xue

The present invention relates to novel solid forms of compound (I), [(1S)-1-[(2S,4R,5R)-5-(5-amino-2-oxo-thiazolo[4,5-d]pyrimidin-3-yl)-4-hydroxy-tetrahydrofuran-2-yl]propyl] acetate and pharmaceutical compositions comprising the solid forms thereof disclosed herein, which may be used as a TLR7 agonist, or for the treatment or prophylaxis of a viral disease in a patient relating to HBV infection or a disease caused by HBV infection.

Solid forms of [(1S)-1-[(2S,4R,5R)-5-(5-amino-2-oxo-thiazolo[4,5-d]pyrimidin-3-yl)-4-hydroxy-tetrahydrofuran-2-yl]propyl] acetate

The present invention relates to novel solid forms of compound (I), 3-[(8aS)-7-[[(4S)-5-ethoxycarbonyl-4-(3-fluoro-2-methyl-phenyl)-2-thiazol-2-yl-1,4-dihydropyrimidin-6-yl]methyl]-3-oxo-5,6,8,8a-tetrahydro-1H-imidazo[1,5-a]pyrazin-2-yl]-2,2-dimethyl-propanoic acid and pharmaceutical compositions comprising solid forms thereof disclosed herein, which can be used as a HBV capsid inhibitor (or HBV Core Protein Allosteric Modifier), or for the treatment or prophylaxis of a viral disease in a patient relating to HBV infection or a disease caused by HBV infection.

Solid forms of a compound of HBV core protein allosteric modifier

The present disclosure provides a semiconductor device and a fabrication method. The semiconductor device includes: a substrate; a first well region in the substrate, having first ions; an isolation layer in the first well region; a second well region and a third well region, formed in the first well region, located respectively on opposite sides of the isolation layer, having second ions with an opposite conductivity type as the first ions, and with a minimum distance from the isolation layer greater than zero; a first gate structure on the second well region and the first well region; a second gate structure on the third well region and the first well region; a barrier gate on the isolation layer, located between the first gate structure and the second gate structure, and having the second ions; and source-drain doped layers in the second well region and the third well region, respectively.

Semiconductor device and fabrication method thereof

The present invention relates to novel solid forms of compound (I) [(1S)-1-[(2S,4R,5R)-5-(5-amino-2-oxo-thiazolo[4,5-d]pyrimidin-3-yl)-4-hydroxy-tetrahydrofuran-2-yl]propyl] acetate and pharmaceutical compositions comprising the solid forms thereof disclosed herein, which may be used as a TLR7 agonist, or for the treatment or prophylaxis of a viral disease in a patient relating to HBV infection or a disease caused by HBV infection. 

Solid forms of [(1 S)-1 -[(2S,4R,5R)-5-(5-amino-2-oxo-thiazolo[4,5-D]pyrimidin-3-yl)-4-hydroxy-tetrahydrofuran-2-Yl]proptl] acetate

The present invention relates to a process for synthesizing a compound of formula (I), Ris H or Calkyl; Ris H or hydroxy; or pharmaceutically acceptable salt or diastereomer thereof, which is useful for prophylaxis and treatment of a viral disease in a patient relating to hepatitis B infection or a disease caused by hepatitis B infection. 

Process for the preparation of 3-substituted 5-amino-6H-thiazolo[4,5-d]pyrimidine-2,7-dione compounds

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Shanghai, China

Xuemei Wang