Seagate Technology Incorporated

Xuelian Xu

Lei Lu

Michael C Kautzky

Jie Gong

Jiaoming Qiu

Steven Carl Riemer

John A Rice

Hilton Erskine

Huaqing Yin

Kirill A Rivkin

A data storage device comprising a recording head having a high damping magnetic alloy layer including at least one magnetic alloy element, and a 5d transition element; the high damping magnetic alloy layer having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure, and the mixed fcc and bcc crystal structure comprising fcc and bcc grains, with the bcc grains having an elongated shape relative to the fcc grains, a larger size than the fcc grains, and slip deformation, thereby providing the high damping magnetic alloy layer with a damping constant of up to about 0.07.

Electrodeposition of high damping magnetic alloys

A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.

A data writer can have at least a write pole separated from first and second side shields by a continuous dielectric gap layer. Each side shield may have first and second shield sub-layers configured with different magnetic moments that increase relative to the sub-layer's distance from the write pole. The side shields may wrap around a leading tip of the write pole to form a box shield.

Data writer with graded side shields

A write head having a write pole with a tip portion defining a pole tip and a paddle portion extending from the tip portion away from the pole tip, the paddle portion defining a back edge. The write head also has a coil structure having at least two active turns crossing the paddle portion, wherein a back of the coil structure is no more than 1 micrometer past the back edge of the write pole. In some implementations, a length from the pole tip to the back edge is no more than 4.5 micrometers.

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Eden Prairie, MN, United States of America

Xuelian Xu