Innovalight, Inc.

University of Minnesota

Pu Ni Tai Yang Neng (Hangzhou) Co., Limited

Pu Ni Tai Neng (Hangzhou) Co., Limited

Xuegeng Li

Karel Vanheusden

Pingrong Yu

Elena Rogojina

Maxim Kelman

David Carl Jurbergs

Dong Wang

Christopher Alcantara

Mason Terry

Uwe Richard Kortshagen

Lorenzo Mangolini

Eric Schiff

Raul Cortez

Rebecca J Anthony

Chistopher Alcantara

A low cost concentrating photovoltaic system includes a condenser system having refractive or reflective optics and a photovoltaic module having one or more thin film solar cells. The thin film solar cells may be a-Si, CdTe, Cu(InGa)Se, organic solar cell or dye sensitized solar cells. The condenser system may be a flat, cylindrical or hemispherical Fresnel lens, a parabolic reflector, a compound parabolic concentrator, a reflective V-trough, or a combination thereof. The condenser system has a concentration ratio of about 10 to 100 or higher. No tracking system is needed in many examples, or a simple one-axis tracking may be used. In one example, the condenser system uses a hemispherical Fresnel lens which focuses sunlight onto a hemispherical focal surface, and one thin film solar cell (mounted on a tracking unit) or multiple cells (without tracking) are disposed on the hemispherical focal surface of the Fresnel lens.

Low-cost thin-film concentrator solar cells

A particle collection apparatus is disclosed. The apparatus includes a baghouse housing comprising an entrance port, a collection port, a baghouse configured between the entrance port and the collection port, and a vacuum port coupled to the baghouse. The apparatus also includes a collection mechanism coupled to the collection port; and, a compression mechanism coupled to the baghouse.

Methods and apparatus for the in situ collection of nucleated particles

A method for fabricating thin film solar cells for a concentrated photovoltaic system uses three shadow masks. The first mask, used to deposit a back contact layer, has multiple horizontal and vertical lines defining columns and rows of cells, and multiple tabs each located in a cell along a center of a vertical border. The second mask, used to deposit a CIGS absorption layer, a window layer and a transparent contact layer, is similar to the first mask except the tabs are located along the opposite vertical border of the cells. The third mask, used to deposit a metal grid layer, has multiple bus bar openings and finger openings. Each bus bar opening is located along a horizontal center line of a cell and overlaps the second tab of a neighboring cell. The cells in a horizontal row are connected in series, forming a linear solar receiver.

Fabrication of interconnected thin-film concentrator cells using shadow masks

An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.

Nanoparticles with grafted organic molecules

A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor

A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.

Method for preparing nanoparticle thin films

Growing community of inventors

Sunnyvale, CA, United States of America

Xuegeng Li