International Business Machines Corporation

Globalfoundries Inc.

Xuefeng Liu

Zhong-Xiang He

Hanyi Ding

Robert Mark Rassel

Kai D Feng

Steven H Voldman

Brent A Anderson

Junli Wang

Jeffrey Bowman Johnson

Kangguo Cheng

Peng Xu

Anthony K Stamper

Terence B Hook

Douglas Duane Coolbaugh

Huiming Bu

Yongan Xu

David Charles Sheridan

Bradley Alan Orner

Alvin Jose Joseph

Zhenrong Jin

John J Ellis-Monaghan

Richard A Phelps

Michael J Hauser

Heng Wu

Gauri V Karve

David S Collins

Xiaowei Tian

Yun Shi

Natalie Barbara Feilchenfeld

Peter John Geiss

Jeffrey P Gambino

JunJun Li

Chi-Chun Liu

Rajendran Krishnasamy

James Spiros Nakos

Michael Joseph Zierak

Randy Lee Wolf

Yann A M Mignot

Miaomiao Wang

Louis DeWolf Lanzerotti

Benjamin T Voegeli

Victor W C Chan

Seong-dong Kim

Takashi Ando

Veeraraghavan S Basker

Chanro Park

Julien Frougier

Steven M Shank

Qizhi Liu

Soon-Cheon Seo

Jingyun Zhang

Robert Russell Robison

Min Gyu Sung

John Michael Cotte

James Albert Slinkman

William F Clark, Jr

William M Green

Renata A Camillo-Castillo

Kathryn Turner Schonenberg

Edward William Kiewra

Lan Yu

Howard Smith Landis

Huimei Zhou

Alvin Wayne Strong

Peter James Lindgren

Stephen Arthur St Onge

Basanth Jagannathan

Ryan Wayne Wuthrich

Praveen Joseph

Mona Abdulkhaleg Ebrish

James J Quinlivan

Eric Raymond Evarts

Florian Braun

John J Benoit

Nils Deneke Hoivik

Michael Lawrence Gautsch

Donald J Cook

David G Brochu, Jr

Mary Claire Micaller Silvestre

Ephrem G Gebgreselasie

Geoffrey Woodhouse

In one embodiment a semiconductor structure comprises a semiconductor substrate, a trench dielectric layer disposed in a trench of the semiconductor substrate, a first source/drain region disposed in contact with the semiconductor substrate, a gate and a second source/drain region. The gate is disposed between the first source/drain region and the second source/drain region. The semiconductor structure further comprises a dielectric isolation layer disposed between the semiconductor substrate and the second source/drain region.

Electrostatic discharge diode having dielectric isolation layer

Embodiments of present invention provide a resistive random-access memory (RRAM) cell. The RRAM cell includes a bottom electrode; a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the central portion, and a vertical portion between the central portion and the peripheral portion; and a top electrode directly above the metal oxide layer. A method of manufacturing the RRAM cell is also provided.

RRAM with high work function cap

Embodiments of the invention include first and second devices formed on a substrate. The first device includes a bottom source or drain (S/D) region, a plurality of fins formed on portions of the bottom S/D region, a bottom spacer formed on the bottom S/D region, a dielectric layer, a gate, a top S/D region formed on each fin of a plurality of fins, and one or more contacts. The dielectric layer is disposed between the gate and the fin of the plurality of fins. The second device includes a bottom doped region, a channel formed the bottom doped region, a sidewall doped region of the channel, a gate coupled to the sidewall doped region, a top doped region, and one or more contacts. A junction is formed between the channel and the sidewall doped region. The cap layer is formed on the gate and the top doped region.

Integrating a junction field effect transistor into a vertical field effect transistor

A method for fabricating a semiconductor device includes forming a vertical field-effect transistor (FET) device including a plurality of first fin structures in a vertical FET device area of a substrate, and forming an input/output (IO) FET device including at least two second fin structures in an IO FET device area of the substrate. The at least two fin structures are connected by a channel having a length determined based on at least one voltage for implementing the IO FET device. Forming the vertical FET and IO FET devices includes selectively exposing a portion of the IO FET device area by selectively removing a portion of a first spacer formed on the substrate in the IO FET device area.

Integration of input/output device in vertical field-effect transistor technology

A semiconductor device includes a substrate having an input/output (IO) field-effect transistor (FET) device area, and an IO FET device formed in the IO FET device area. The IO FET device includes at least two fin structures separated by a distance associated with a length of a channel connecting the at least two fin structures. The length of the channel is determined based on at least one voltage for implementing the IO FET device.

High breakdown voltage devices are provided. In one aspect, a method of forming a device having a VTFET and a LDVTFET includes: forming a LDD in an LDVTFET region; patterning fin(s) in a VTFET region to a depth D1; patterning fin(s) in the LDVTFET region, through the LDD, to a depth D2&#x3e;D1; forming bottom source/drains at a base of the VTFET/LDVTFET fins; burying the VTFET/LDVTFET fins in a gap fill dielectric; recessing the gap fill dielectric to full expose the VTFET fin(s) and partially expose the LDVTFET fin(s); forming bottom spacers directly on the bottom source/drains in the VTFET region and directly on the gap fill dielectric in the LDVTFET region; forming gates alongside the VTFET/LDVTFET fins; forming top spacers above the gates; and forming top source/drains above the top spacers. A one-step fin etch and devices having VTFET and long channel VTFETs are also provided.

Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs

Techniques for generating enhanced inductors and other electronic devices are presented. A device generator component (DGC) performs directed-self assembly (DSA) co-polymer deposition on a circular guide pattern formed in low-k dielectric film, and DSA annealing to form two polymers in the form of alternating concentric rings; performs a loop cut in the concentric rings to form concentric segments; fills the cut portion with insulator material; selectively removes first polymer, fills the space with low-k dielectric, and planarizes the surface; selectively removes the second polymer, fills the space with conductive material, and planarizes the surface; deposits low-k film on top of the concentric segments and insulator material that filled the loop cut portion; forms vias in the low-k film, wherein each via spans from an end of one segment to an end of another segment; and fills vias with conductive material to form conductive connectors to form substantially spiral conductive structure.

Electronic devices having spiral conductive structures

A method of fabricating a semiconductor device includes forming one or more fins on a substrate. The method includes forming a first active area and a second active area, each including an n-type dopant, on the substrate at opposing ends of the one or more fins. The method further includes forming a third active area including a p-type dopant on the substrate adjacent to the first active area and the second active area.

Integration of electrostatic discharge protection into vertical fin technology

A MRAM-TFT unit cell and a method for fabricating the same. The MRAM-TFT unit cell includes a MRAM device and a TFT device electrically coupled to the MRAM device. The MRAM device and the TFT device are situated within a common plane of the MRAM-TFT cell. The method includes forming a TFT device comprising a source/drain region, and a semiconducting layer on a substrate. A magnetic tunnel junction stack (MTJ) is formed in contact with the source region. A first contact is formed on the MTJ, and a second contact is formed on the drain region. A first interconnect metal layer is formed in contact with the first contact, and a second first interconnect metal layer is formed in contact with the second contact. A third contact is formed on a gate region of the TFT device. A third interconnect metal layer is formed in contact with the third contact.

Magnetoresistive random access memory thin film transistor unit cell

Device and methods are provided for fabricating semiconductor devices in which metal-insulator-metal (MIM) capacitor devices are integrally formed with vertical field effect transistor (FET) devices. For example, a semiconductor device includes first and second vertical FET devices, and a capacitor device, formed in different device regions of a substrate. A gate electrode of the first FET device and a first capacitor electrode of the capacitor device are patterned from a same first layer of conductive material. A gate electrode of the second FET device and a second capacitor electrode of the capacitor device are patterned from a same second layer of conductive material. A gate dielectric layer of the second FET device and a capacitor insulator layer of the capacitor device are formed from a same layer of dielectric material.

Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors

A vertical field-effect transistor (FET) device and an input/output (IO) FET device are formed. The vertical FET device is formed in a vertical FET device area of a substrate and the IO FET device is formed in an IO FET device area of the substrate. Forming the vertical FET device and the IO FET device includes forming a plurality of first fin structures in the vertical FET device area and forming at least two second fin structures in the IO FET device area. The at least two second fin structures are separated by a distance associated with a length of a channel connecting the at least two fin structures in the IO FET device area. The length of the channel is determined based on at least one voltage for implementing the IO FET device.

A method of forming a vertical transport field effect transistors with uniform bottom spacer thickness, including, forming a plurality of vertical fins on a substrate, forming a protective liner layer on the plurality of vertical fins, forming a sacrificial liner on the protective liner layer, forming a spacer liner on a portion of the sacrificial liner, wherein at least a top surface of the sacrificial liner on each of the vertical fins is exposed, converting the exposed portion of the sacrificial liner on each of the vertical fins to a conversion cap, and removing the conversion cap from each of the vertical fins to expose an upper portion of each vertical fin.

Forming vertical transport field effect transistors with uniform bottom spacer thickness

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South Burlington, VT, United States of America

Xuefeng Liu