International Business Machines Corporation

Xuefeng Lie

Douglas Duane Coolbaugh

Jeffrey Bowman Johnson

Robert Mark Rassel

James Spiros Nakos

Peter James Lindgren

David Charles Sheridan

Bradley A Omer

A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.

Silicided trench contact to buried conductive layer

Growing community of inventors

South Burlington, VT, United States of America

Xuefeng Lie