Seagate Technology Incorporated

Xuefei Tang

Song Sheng Xue

Patrick Joseph Ryan

Michael C Kautzky

Paul E Anderson

Qing I He

Chunhong Hou

Dimitar Velikov Dimitrov

Lei Wang

Declan Macken

Eric Walter Singleton

Insik Jin

Sining Mao

Jianhua Xue

Olle Gunnar Heinonen

Eric Shane Linville

Thomas Roy Boonstra

Robert William Lamberton

Johannes Van Ek

Dehua Han

Christopher James Thompson Rea

Bryan K Oliver

A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.

Magnetoresistive device having specular sidewall layers

A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.

A magnetic writer includes a write pole configured to reduce a skew effect during writing to a magnetic medium. A trailing portion of the write pole has a magnetic moment greater than a leading portion of the write pole.

Magnetic writer pole with a graded magnetic moment

A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

Biasing for tri-layer magnetoresistive sensors

A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.

Magnetoresistive sensor having specular sidewall layers

The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the bottom shield and the nonmagnetic metallic pedestal has a width less than the width of the bottom shield. The bottom reader gap is positioned on the nonmagnetic metallic pedestal and on the bottom shield such that a portion of the bottom reader gap over the nonmagnetic metallic pedestal is raised relative to portions of the bottom reader gap not over the nonmagnetic metallic pedestal.

Spin valve sensor for high areal density applications

A structure for stabilizing the active region of the magnetic sensor comprises a hard ferromagnetic element adjacent to a biasing multilayer element placed on either side of the active region of the magnetic sensor. The biasing multilayer element includes soft ferromagnetic and anti-ferromagnetic layers such that the biasing strength applied to the active region of the magnetic sensor is tuneable by adjusting the length of the soft ferromagnetic layer or layers as well as the insertion of spacer layers between the soft ferromagnetic materials and the anti-ferromagnetic layers. The inventive structure provides longitudinal bias to the active region with improved domain control, signal amplitude and side-reading properties.

Mag-tab design for biasing magnetic sensors

A giant magnetoresistive spin valve for use in a magnetic read head includes a ferromagnetic free layer and a multilayer cap layer. The free layer has a rotatable magnetic moment. The multilayer cap layer is positioned adjacent to the free layer for increasing electron specular scattering of the free layer.

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Eden Prairie, MN, United States of America

Xuefei Tang